We analyzed the impact of work-function variation (WFV) in ferroelectric field-effect transistor (FeFET). To analyze the operation characteristics, we employed the technology computer-aided design (TCAD) simulations. After evaluating ferroelectricity (FE) characteristics and optimizing device model parameters through calibration, we extracted five key parameters from the hysteretic transfer curves of the FeFET: threshold voltage (Vth), on current (Iin), subthreshold swing (SS), off current (Ioff), and gate-induced drain leakage (GIDL). The extracted parameters were compared based on the presence or absence of FE and the ferroelectric thickness. It was confirmed that the presence of FE leads to increased variation due to dipole alignment with WFV, and that the electric field is maintained even with an increase in ferroelectric thickness
This work was supported in part by the National Research Foundation of Korea (NRF) Grant funded by the Korea Government (MSIT) under Grant RS-2023-00249784, and Grant NRF-2022R1A2C1093201; in part by the Technology Innovation Program (Development of eGaN HEMT Device Advancement Technology using GaN Standard Modeling Technology(ASM)) funded By the Ministry of Trade, Industry and Energy (MOTIE), South Korea, under Grant 20026440; and in part by the EDA tool was supported by the IC Design Education Center (IDEC), South Korea.This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea Government (MSIT) under Grant NRF-2022R1A2C1093201. This work was supported by the Technology Innovation Program (20026440, Development of eGaN HEMT Device Advancement Technology using GaN Standard Modeling Technology(ASM)) funded By the Ministry of Trade, Industry & Energy (MOTIE, Korea). The EDA tool was supported by the IC Design Education Center (IDEC), KOREA. (Jongmin Lee and Jang Hyun Kim are contributed equally to this work.) (jongmin@ajou.ac.kr, janghyun@ajou.ac.kr)
