Listed on
(Coverage)
JCR2015-2023
SJR2014-2020;2022-2023
CiteScore2013-2023
SCIE2015-2024
CC2016-2024
SCOPUS2017-2024
DOAJ2017-2024
OA Info.
| OA |
oa mark
based on the information
- 2017;2018;2019;2020;2021;2022;2023;2024;2025;
|
| Keywords |
field effect transistors, logic gates, integrated circuit devices, display technologies, wearable devices |
| Review Process |
Anonymous peer review |
Journal info.
pages |
|
| Licences |
CC BY, CC BY-NC-ND |
| Copyrights |
Yes |
| DOAJ Coverage |
Added on Date : 2014-10-23T13:53:10Z |
| Subject(s) |
Technology: Electrical engineering. Electronics. Nuclear engineering |
Country
USA
Aime & Scopes
The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC's, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original. All research papers benefit from rapid peer review and publication, and are deposited in IEEE Xplore.
