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Showing results 1 to 10 of 517 (Search time: 0.0 seconds).

Impact of Work-Function Variation in Ferroelectric Field-Effect Transistoroa mark
  • 2024-01-01
  • IEEE Journal of the Electron Devices Society, Vol.12, pp.779-784
  • Institute of Electrical and Electronics Engineers Inc.
Experimental Analysis on the Interaction Between Interface Trap Charges and Polarization on the Memory Window of Metal-Ferroelectric-Insulator-Si (MFIS) FeFET
  • Kim, Giuk;
  • Choi, Hyojun;
  • Lee, Sangho;
  • Shin, Hunbeom;
  • Lee, Sangmok;
  • Nam, Yunseok;
  • Kang, Hyunjun;
  • Shin, Seokjoong;
  • Kim, Hoon;
  • Lim, Youngjin;
  • Kim, Kang;
  • Oh, Il Kwon;
  • Ko Park, Sang Hee;
  • Ahn, Jinho;
  • Jeon, Sanghun
  • 2024-01-01
  • IEEE Transactions on Electron Devices, Vol.71, pp.6627-6632
  • Institute of Electrical and Electronics Engineers Inc.
Positive Interaction between Charge Trapping and Polarization Switching in Metal-Interlayer-Ferroelectric-Interlayer-Silicon (MIFIS) Ferroelectric Field-Effect Transistor
  • Choi, Hyojun;
  • Kim, Giuk;
  • Lee, Sangho;
  • Shin, Hunbeom;
  • Lim, Youngjin;
  • Kim, Kang;
  • Kim, Do Hyung;
  • Oh, Il Kwon;
  • Park, Sang Hee Ko;
  • Ahn, Jinho;
  • Jeon, Sanghun
  • 2024-01-01
  • IEEE Electron Device Letters, Vol.45, pp.2351-2354
  • Institute of Electrical and Electronics Engineers Inc.
Ferroelectric α-In2Se3 Wrapped-Gate β-Ga2O3 Field-Effect Transistors for Dynamic Threshold Voltage Control
  • Yang, Jeong Yong;
  • Yeom, Min Jae;
  • Park, Youngseo;
  • Heo, Junseok;
  • Yoo, Geonwook
  • 2021-08-01
  • Advanced Electronic Materials, Vol.7
  • John Wiley and Sons Inc
Asymmetric Double-Gate β-Ga2O3 Nanomembrane Field-Effect Transistor for Energy-Efficient Power Devices
  • Ma, Jiyeon;
  • Cho, Hyung Jun;
  • Heo, Junseok;
  • Kim, Sunkook;
  • Yoo, Geonwook
  • 2019-06-01
  • Advanced Electronic Materials, Vol.5
  • Blackwell Publishing Ltd
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