Ajou University repository

  • Add filters:
  • Results/Page
  • Sort by
  • In order
  • Authors/record

Showing results 1 to 10 of 5403 (Search time: 0.0 seconds).

Impact of Work-Function Variation in Ferroelectric Field-Effect Transistoroa mark
  • 2024-01-01
  • IEEE Journal of the Electron Devices Society, Vol.12, pp.779-784
  • Institute of Electrical and Electronics Engineers Inc.
Ferroelectric α-In2Se3 Wrapped-Gate β-Ga2O3 Field-Effect Transistors for Dynamic Threshold Voltage Control
  • Yang, Jeong Yong;
  • Yeom, Min Jae;
  • Park, Youngseo;
  • Heo, Junseok;
  • Yoo, Geonwook
  • 2021-08-01
  • Advanced Electronic Materials, Vol.7
  • John Wiley and Sons Inc
Positive Interaction between Charge Trapping and Polarization Switching in Metal-Interlayer-Ferroelectric-Interlayer-Silicon (MIFIS) Ferroelectric Field-Effect Transistor
  • Choi, Hyojun;
  • Kim, Giuk;
  • Lee, Sangho;
  • Shin, Hunbeom;
  • Lim, Youngjin;
  • Kim, Kang;
  • Kim, Do Hyung;
  • Oh, Il Kwon;
  • Park, Sang Hee Ko;
  • Ahn, Jinho;
  • Jeon, Sanghun
  • 2024-01-01
  • IEEE Electron Device Letters, Vol.45, pp.2351-2354
  • Institute of Electrical and Electronics Engineers Inc.
Experimental Analysis on the Interaction Between Interface Trap Charges and Polarization on the Memory Window of Metal-Ferroelectric-Insulator-Si (MFIS) FeFET
  • Kim, Giuk;
  • Choi, Hyojun;
  • Lee, Sangho;
  • Shin, Hunbeom;
  • Lee, Sangmok;
  • Nam, Yunseok;
  • Kang, Hyunjun;
  • Shin, Seokjoong;
  • Kim, Hoon;
  • Lim, Youngjin;
  • Kim, Kang;
  • Oh, Il Kwon;
  • Ko Park, Sang Hee;
  • Ahn, Jinho;
  • Jeon, Sanghun
  • 2024-01-01
  • IEEE Transactions on Electron Devices, Vol.71, pp.6627-6632
  • Institute of Electrical and Electronics Engineers Inc.
Reconfigurable Radio-Frequency High-Electron Mobility Transistors via Ferroelectric-Based Gallium Nitride Heterostructure
  • Yang, Jeong Yong;
  • Yeom, Min Jae;
  • Lee, Jaeyong;
  • Lee, Kyusang;
  • Park, Changkun;
  • Heo, Junseok;
  • Yoo, Geonwook
  • 2022-09-01
  • Advanced Electronic Materials, Vol.8
  • John Wiley and Sons Inc
Effects of Substrate and Annealing Conditions on the Ferroelectric Properties of Non-Doped HfO2 Deposited by RF Plasma Sputteroa mark
  • 2024-09-01
  • Nanomaterials, Vol.14
  • Multidisciplinary Digital Publishing Institute (MDPI)
Effects of plasma power on ferroelectric properties of HfO2-ZrO2 nanolaminates produced by plasma enhanced atomic layer deposition
  • 2023-04-01
  • Surfaces and Interfaces, Vol.37
  • Elsevier B.V.
1 2 3 4 541

Discover