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A New Pipelined Output Data Reducer of BOST for Improved Parallelism
  • 2025-01-01
  • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, Vol.44, pp.765-776
  • Institute of Electrical and Electronics Engineers Inc.
Effective Parallel Redundancy Analysis Using GPU for Memory Repair
  • 2025-01-01
  • IEEE Transactions on Very Large Scale Integration (VLSI) Systems, Vol.33, pp.462-474
  • Institute of Electrical and Electronics Engineers Inc.
Impact of Self-Heating Effect on DC and AC Performance of FD-SOI CMOS Inverteroa mark
  • 2025-01-01
  • IEEE Journal of the Electron Devices Society, Vol.13, pp.41-48
  • Institute of Electrical and Electronics Engineers Inc.
RAPID: Redundancy Analysis With Parallelized and Intelligent Distributionoa mark
  • 2025-01-01
  • IEEE Access, Vol.13, pp.2089-2100
  • Institute of Electrical and Electronics Engineers Inc.
A Novel CNN-Based Redundancy Analysis Using Parallel Solution Decision
  • Shin, Seung Ho;
  • Cheong, Minho;
  • Lee, Hayoung;
  • Kim, Byungsoo;
  • Kang, Sungho
  • 2025-01-01
  • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
  • Institute of Electrical and Electronics Engineers Inc.
Investigation of ferro-resistive switching mechanisms in TiN/Hf0.5Zr0.5O2/WOx/W ferroelectric tunnel junctions with the interface layer effect
  • Lee, Suk Hyun;
  • Park, Han Sol;
  • Shin, Seong Jae;
  • Lee, In Soo;
  • Ryoo, Seung Kyu;
  • Byun, Seungyong;
  • Kim, Kyung Do;
  • Moon, Taehwan;
  • Hwang, Cheol Seong
  • 2024-12-01
  • Applied Physics Reviews, Vol.11
  • American Institute of Physics
Work-Function Variation and Delay Analysis in NAND and NOR Circuits using Gate Insulator Stack-based Dopingless Tunnel Field-effect Transistors
  • 2024-12-01
  • Journal of Semiconductor Technology and Science, Vol.24, pp.557-564
  • Institute of Electronics Engineers of Korea
Vertically Stacked Broadband GNIF-MoS2/p-Ge Photodetector for Dark Current Suppression, High Photoresponse, and Ultrafast Transient Response
  • Pandey, Rajiv Kumar;
  • Choi, Hwayong;
  • Kim, Young Hoon;
  • Jeong, Subin;
  • Kim, Yeji;
  • Heo, Junseok
  • 2024-11-05
  • Advanced Optical Materials, Vol.12
  • John Wiley and Sons Inc
Effect of passivation layers in bilayer with ZrO2 on Ge substrate for improved thermal stability
  • 2024-11-01
  • Journal of Materials Science, Vol.59, pp.19584-19595
  • Springer
Network of artificial olfactory receptors for spatiotemporal monitoring of toxic gas
  • Baek, Yongmin;
  • Bae, Byungjoon;
  • Yang, Jeongyong;
  • Cho, Wonjun;
  • Sim, Inbo;
  • Yoo, Geonwook;
  • Chung, Seokhyun;
  • Heo, Junseok;
  • Lee, Kyusang
  • 2024-10-18
  • Science Advances, Vol.10
  • American Association for the Advancement of Science
Si precursor inhibitors for area selective deposition of Ru
  • Gu, Bonwook;
  • Yasmeen, Sumaira;
  • Oh, Geun Ha;
  • Oh, Il Kwon;
  • Kang, Youngho;
  • Lee, Han Bo Ram
  • 2024-10-01
  • Applied Surface Science, Vol.669
  • Elsevier B.V.
Leveraging volatile memristors in neuromorphic computing: from materials to system implementation
  • Moon, Taehwan;
  • Soh, Keunho;
  • Kim, Jong Sung;
  • Kim, Ji Eun;
  • Chun, Suk Yeop;
  • Cho, Kyungjune;
  • Yang, J. Joshua;
  • Yoon, Jung Ho
  • 2024-08-20
  • Materials Horizons, Vol.11, pp.4840-4866
  • Royal Society of Chemistry
Direct Observation for Distinct Behaviors of Gamma-Ray Irradiation-Induced Subgap Density-of-States in Amorphous InGaZnO TFTs by Multiple-Wavelength Light Sourceoa mark
  • Yoo, Jaewook;
  • Jo, Hyeun Seung;
  • Jeon, Seung Bae;
  • Moon, Taehwan;
  • Lee, Hongseung;
  • Lim, Seongbin;
  • Song, Hyeonjun;
  • Lee, Binhyeong;
  • Yoon, Soon Joo;
  • Kim, Soyeon;
et al
  • 2024-08-01
  • Advanced Electronic Materials, Vol.10
  • John Wiley and Sons Inc
Photon-pair generation using inverse-designed thin-film lithium niobate mode convertersoa mark
  • Kwon, Kiwon;
  • Heo, Hyungjun;
  • Lee, Dongjin;
  • Kim, Hyeongpin;
  • Jang, Hyeong Soon;
  • Shin, Woncheol;
  • Lim, Hyang Tag;
  • Kim, Yong Su;
  • Han, Sang Wook;
  • Kim, Sangin;
et al
  • 2024-05-01
  • APL Photonics, Vol.9
  • American Institute of Physics
Review of Material Properties of Oxide Semiconductor Thin Films Grown by Atomic Layer Deposition for Next-Generation 3D Dynamic Random-Access Memory Devices
  • Choi, Ae Rim;
  • Lim, Dong Hyun;
  • Shin, So Yeon;
  • Kang, Hye Joo;
  • Kim, Dohee;
  • Kim, Ja Yong;
  • Ahn, Youngbae;
  • Ryu, Seung Wook;
  • Oh, Il Kwon
  • 2024-03-12
  • Chemistry of Materials, Vol.36, pp.2194-2219
  • American Chemical Society
Role of a cyclopentadienyl ligand in a heteroleptic alkoxide precursor in atomic layer deposition
  • Yoon, Hwi;
  • Lee, Yujin;
  • Lee, Ga Yeon;
  • Seo, Seunggi;
  • Park, Bo Keun;
  • Chung, Taek Mo;
  • Oh, Il Kwon;
  • Kim, Hyungjun
  • 2024-01-14
  • Journal of Chemical Physics, Vol.160
  • American Institute of Physics Inc.
First Demonstration of Thermally Stable Zr:HfO2Ferroelectrics via Inserting AlN Interlayer
  • Lee, Sangmok;
  • Kim, Giuk;
  • Lee, Sangho;
  • Shin, Hunbeom;
  • Lim, Youngjin;
  • Kim, Kang;
  • Kim, Do Hyung;
  • Oh, Il Kwon;
  • Ko Park, Sang Hee;
  • Ahn, Jinho;
et al
  • 2024-01-01
  • IEEE Electron Device Letters, Vol.45, pp.1578-1581
  • Institute of Electrical and Electronics Engineers Inc.
Experimental Analysis on the Interaction Between Interface Trap Charges and Polarization on the Memory Window of Metal-Ferroelectric-Insulator-Si (MFIS) FeFET
  • Kim, Giuk;
  • Choi, Hyojun;
  • Lee, Sangho;
  • Shin, Hunbeom;
  • Lee, Sangmok;
  • Nam, Yunseok;
  • Kang, Hyunjun;
  • Shin, Seokjoong;
  • Kim, Hoon;
  • Lim, Youngjin;
et al
  • 2024-01-01
  • IEEE Transactions on Electron Devices, Vol.71, pp.6627-6632
  • Institute of Electrical and Electronics Engineers Inc.
An Efficient Scan Diagnosis for Intermittent Faults using CNN with Multi-Channel Dataoa mark
  • Yun, Hyojoon;
  • Lim, Hyeonchan;
  • Lee, Hayoung;
  • Yoon, Doohyun;
  • Kang, Sungho
  • 2024-01-01
  • IEEE Access
  • Institute of Electrical and Electronics Engineers Inc.
A Robust Test Architecture for Low-Power AI Accelerators
  • 2024-01-01
  • IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
  • Institute of Electrical and Electronics Engineers Inc.
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