In this study, the effects of Al2O3 and Y2O3 passivation layers on Ge substrates are investigated to enhance the thermal stability of Ge-based devices. Using X-ray photoelectron spectroscopy, we analyze the growth characteristics and chemical composition of Al2O3, Y2O3, and ZrO2 on Ge. The changes in the crystallinity of ZrO2 on different substrates of Ge, Al2O3/Ge, and Y2O3/Ge configurations are observed via X-ray diffraction. Material properties, including capacitance, flat band voltage shift (ΔVFB), oxide charge trap (Not), interface defect density (Dit), and leakage current, are analyzed using the metal–oxide–semiconductor capacitor, with a particular focus on their electrical characteristics. Additionally, we investigate whether the passivation mechanisms of each material are more suitable for enhancing thermal stability. Overall, this study provides insight into the role of passivation layers in improving the interface and thermal stability of Ge-based devices, offering valuable contributions to the advancement of semiconductor technology. Graphical abstract: (Figure presented.)
This study was primarily supported by the National R&D Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Science and ICT (NRF2020M3F3A2A01082593). This work was supported by the National Research Foundation of Korea(NRF) grant funded by the Korea government(MSIT)(RS-2024-00357895). This work was supported by the National Research Foundation of Korea (NRF) through a Research Grant funded by the Korean Ministry of Science and ICT (MSIT) under the Grant No. 2023M3H4A6A01057927. This study was supported by the Technology Innovation Program (or Industrial Strategic technology development program, 00143986, Equipment Development for SiN Deposition with Plasma Source for MTJ Capping Layer) (or Industrial Strategic Technology Development Program-Development of material parts package type technology) (20017392, Development of high-performance LMFC for next-generation semiconductor manufacturing) funded By the Ministry of Trade, Industry & Energy(MOTIE, Korea).Funding was provided by Ministry of Science and ICT, South Korea, 2020M3F3A2A01082593, 2023M3H4A6A01057927, RS-2024-00357895, Il-Kwon Oh.
