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Effective Parallel Redundancy Analysis Using GPU for Memory Repair
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Publication Year
2025-01-01
Publisher
Institute of Electrical and Electronics Engineers Inc.
Citation
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, Vol.33, pp.462-474
Keyword
Automatic test equipment (ATE)graphic processing unit (GPU)parallel processingredundancy analysis (RA)thread
Mesh Keyword
Analysis methodAutomatic test equipmentGraphic processing unitGraphics processingParallel processingProcessing unitsRedundancy analysisRedundancy analyzeThread
All Science Classification Codes (ASJC)
SoftwareHardware and ArchitectureElectrical and Electronic Engineering
Abstract
The rapid increment of the memory density leads to an increment of fault occurrence in memory cells. To improve the memory yield, effective memory test and repair methodologies for automatic test equipment (ATE) have been studied. Multiple memory chips are tested simultaneously by the ATE to improve throughput and reduce costs. In general, redundancy analysis (RA) is used for memory repair. However, since conventional RA methods store fault information in the respective failure bitmaps and operate sequentially, those have limitations due to the high area and analysis time. To address these problems, a novel graphic processing unit (GPU)-based RA method has been proposed which significantly enhances the efficiency of searching for repair solutions for multiple memories. The proposed RA method strategically focuses on the pivot line to efficiently utilize parallel processing and reduce the solution search space. Moreover, the proposed method does not require the extensive use of failure bitmaps since all process is conducted on the GPU. The process involves real-time fault collection, analysis, spare allocation, and solution decision process dynamically during the memory test. Experimental results demonstrate that the performance of the proposed RA method achieves an optimal repair rate and high analysis speed for multiple memories.
Language
eng
URI
https://dspace.ajou.ac.kr/dev/handle/2018.oak/34469
DOI
https://doi.org/10.1109/tvlsi.2024.3454286
Fulltext

Type
Article
Funding
This work was supported in part by the Ministry of Trade, Industry and Energy (MOTIE), under Grant 20019363; and in part by Korea Semiconductor Research Consortium (KSRC) Support Program for the Development of the Future Semiconductor Device.Manuscript received 28 May 2024; revised 7 August 2024; accepted 29 August 2024. This work was supported in part by the Ministry of Trade, Industry and Energy (MOTIE), under Grant 20019363; and in part by Korea Semiconductor Research Consortium (KSRC) Support Program for the Development of the Future Semiconductor Device. (Corresponding author: Sungho Kang.) Seung Ho Shin and Sungho Kang are with the Computer Systems Reliable SoC Laboratory, Department of Electrical and Electronic Engineering, Yonsei University, Seoul 03722, South Korea (e-mail: shin080314@yonsei.ac.kr; shkang@yonsei.ac.kr).
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Lee, Hayoung이하영
Department of Intelligence Semiconductor Engineering
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