Ajou University repository

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Showing results 1 to 10 of 46 (Search time: 0.0 seconds).

Effects of Material and Doping Profile Engineering of Source Junction on Line Tunneling FET Operations
  • 2023-08-01
  • Journal of Semiconductor Technology and Science, Vol.23, pp.228-235
  • Institute of Electronics Engineers of Korea
Rigorous study on hump phenomena in surrounding channel nanowire (SCNW) tunnel field-effect transistor (TFET)oa mark
  • 2020-05-01
  • Applied Sciences (Switzerland), Vol.10
  • MDPI AG
Field-Effect Device Using Quasi-Two-Dimensional Electron Gas in Mass-Producible Atomic-Layer-Deposited Al2O3/TiO2 Ultrathin (<10 nm) Film Heterostructures
  • Seok, Tae Jun;
  • Liu, Yuhang;
  • Jung, Hae Jun;
  • Kim, Soo Bin;
  • Kim, Dae Hyun;
  • Kim, Sung Min;
  • Jang, Jae Hyuck;
  • Cho, Deok Yong;
  • Lee, Sang Woon;
  • Park, Tae Joo
  • 2018-01-01
  • ACS Nano, Vol.12, pp.10403-10409
  • American Chemical Society
Impact of Work-Function Variation in Ferroelectric Field-Effect Transistoroa mark
  • 2024-01-01
  • IEEE Journal of the Electron Devices Society, Vol.12, pp.779-784
  • Institute of Electrical and Electronics Engineers Inc.
Ternary Logic Transistors Using Multi-Stacked 2D Electron Gas Channels in Ultrathin Oxide Heterostructuresoa mark
  • Choi, Ji Hyeon;
  • Seok, Tae Jun;
  • Kim, Sang June;
  • Dae, Kyun Seong;
  • Jang, Jae Hyuck;
  • Cho, Deok Yong;
  • Lee, Sang Woon;
  • Park, Tae Joo
  • 2025-02-10
  • Advanced Science, Vol.12
  • John Wiley and Sons Inc
확장 게이트 구조의 접합이 없는 터널 전계 효과 트랜지스터
  • 박소라
  • 2022-02
  • The Graduate School, Ajou University
The Significance of an In Situ ALD Al2O3 Stacked Structure for p-Type SnO TFT Performance and Monolithic All-ALD-Channel CMOS Inverter Applicationsoa mark
  • 2023-04-01
  • Advanced Electronic Materials, Vol.9
  • John Wiley and Sons Inc
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