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Showing results 1 to 10 of 1527 (Search time: 0.0 seconds).

Asymmetric Double-Gate β-Ga2O3 Nanomembrane Field-Effect Transistor for Energy-Efficient Power Devices
  • Ma, Jiyeon;
  • Cho, Hyung Jun;
  • Heo, Junseok;
  • Kim, Sunkook;
  • Yoo, Geonwook
  • 2019-06-01
  • Advanced Electronic Materials, Vol.5
  • Blackwell Publishing Ltd
Approaching the Nernst Detection Limit in an Electrolyte-Gated Metal Oxide Transistor
  • 2021-01-01
  • IEEE Electron Device Letters, Vol.42, pp.50-53
  • Institute of Electrical and Electronics Engineers Inc.
Review of wide band-gap technology: power device, gate driver, and converter design
  • Ravinchandra, Krishna;
  • Freddy, Tan Kheng Suan;
  • Lee, June Seok;
  • Lee, Kyo Beum;
  • Mantooth, Homer Alan;
  • Thiruchelvam, Vinesh;
  • Xian, Jerome Ignatius Yuen Yi
  • 2022-08-01
  • Journal of Power Electronics, Vol.22, pp.1398-1413
  • Springer
Ferroelectric α-In2Se3 Wrapped-Gate β-Ga2O3 Field-Effect Transistors for Dynamic Threshold Voltage Control
  • Yang, Jeong Yong;
  • Yeom, Min Jae;
  • Park, Youngseo;
  • Heo, Junseok;
  • Yoo, Geonwook
  • 2021-08-01
  • Advanced Electronic Materials, Vol.7
  • John Wiley and Sons Inc
Pt-Decorated Graphene Gate AlGaN/GaN MIS-HEMT for Ultrahigh Sensitive Hydrogen Gas Detection
  • Ahn, Jungho;
  • Kim, Dahee;
  • Park, Kyung Ho;
  • Yoo, Geonwook;
  • Heo, Junseok
  • 2021-03-01
  • IEEE Transactions on Electron Devices, Vol.68, pp.1255-1261
  • Institute of Electrical and Electronics Engineers Inc.
Gate-tunable photodetector and ambipolar transistor implemented using a graphene/MoSe2 barristoroa mark
  • 2021-12-01
  • NPG Asia Materials, Vol.13
  • Nature Research
Analysis of thermal effects according to channel and drain contact metal distanceoa mark
  • 2025-01-01
  • Case Studies in Thermal Engineering, Vol.65
  • Elsevier Ltd
Electrical properties of ion gels based on PVDF-HFP applicable as gate stacks for flexible devices
  • 2018-05-01
  • Current Applied Physics, Vol.18, pp.500-504
  • Elsevier B.V.
Modeling and Simulation Study of Reduced Self-Heating in Bottom-Gate β-Ga2O3 MISFETs with a h-BN Gate Insulator
  • 2019-06-01
  • Journal of the Korean Physical Society, Vol.74, pp.1171-1175
  • The Korean Physical Society
Optimization of Dual-workfunction Line Tunnel Field-effect Transistor with Island Source Junction
  • Yun, Chaewon;
  • Kim, Sangwan;
  • Cho, Seongjae;
  • Cho, Il Hwan;
  • Kim, Hyunwoo;
  • Kim, Jang Hyun;
  • Kim, Garam
  • 2023-08-01
  • Journal of Semiconductor Technology and Science, Vol.23, pp.207-214
  • Institute of Electronics Engineers of Korea
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