This paper reviewed the state-of-the-art wide band-gap (WBG) technology from material level to system level. The properties of semiconductor materials, i.e., silicon carbide and gallium nitride, were investigated. The electrical characteristics of commercial power devices, which include static and dynamic performances, were assessed, and compared. The design requirements of WBG gate drivers were then underpinned, and various gate driver topologies were reviewed. Finally, their implementation in power electronic converters and performances were evaluated.
This work was supported in part by the Ministry of Higher Education Malaysia under Grant FRGS/1/2018/TK04/APU/03/2 and in part by Asia Pacific University of Technology and Innovation under Grant APURDG/05/2019.
