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Electrical properties of ion gels based on PVDF-HFP applicable as gate stacks for flexible devices
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Publication Year
2018-05-01
Publisher
Elsevier B.V.
Citation
Current Applied Physics, Vol.18, pp.500-504
Keyword
Field effect transistorFlexible deviceIon gelIon liquidPolymer
Mesh Keyword
Electrical characteristicFlexible deviceFlexible electronic devicesFunction of frequencyGate stacksIon gelsPoly(vinylidene fluoride-co-hexafluoropropylene)Simple circuits
All Science Classification Codes (ASJC)
Materials Science (all)Physics and Astronomy (all)
Abstract
Electrical characteristics of ion gels prepared by loading different amounts of 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMIM][TFSI]) in Poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) are investigated and compared with those of ion liquid, [EMIM][TFSI] for possible application as a gate stack for flexible electronic devices. Capacitance and impedance as a function of frequency are measured, which can be well accounted for by a simple circuit model identifying the local device components. The operation of a flexible field effect transistor based on graphene and the ion gel as a top gate stack is also demonstrated.
ISSN
1567-1739
Language
eng
URI
https://dspace.ajou.ac.kr/dev/handle/2018.oak/30112
DOI
https://doi.org/10.1016/j.cap.2018.02.017
Fulltext

Type
Article
Funding
This work was supported by “Human Resources Program in Energy Technology” of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), granted financial resource from the Ministry of Trade, Industry and Energy (No. 20164030201380), Basic Science Research Program (NRF-2015R1D1A1A01057417) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education of the Republic of Korea, and by the Ajou University research fund.This work was supported by “ Human Resources Program in Energy Technology ” of the Korea Institute of Energy Technology Evaluation and Planning ( KETEP ), granted financial resource from the Ministry of Trade, Industry and Energy (No. 20164030201380 ), Basic Science Research Program ( NRF-2015R1D1A1A01057417 ) through the National Research Foundation of Korea ( NRF ) funded by the Ministry of Education of the Republic of Korea , and by the Ajou University research fund.
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Ahn, Yeonghwan Image
Ahn, Yeonghwan안영환
Department of Physics
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