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Electrical properties of ion gels based on PVDF-HFP applicable as gate stacks for flexible devices
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dc.contributor.authorChae, Kwanbyung-
dc.contributor.authorCuong, Nguyen Duc-
dc.contributor.authorRyu, Shinyoung-
dc.contributor.authorYeom, Dong Il-
dc.contributor.authorAhn, Y. H.-
dc.contributor.authorLee, Soonil-
dc.contributor.authorPark, Ji Yong-
dc.date.issued2018-05-01-
dc.identifier.issn1567-1739-
dc.identifier.urihttps://dspace.ajou.ac.kr/dev/handle/2018.oak/30112-
dc.description.abstractElectrical characteristics of ion gels prepared by loading different amounts of 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMIM][TFSI]) in Poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF-HFP) are investigated and compared with those of ion liquid, [EMIM][TFSI] for possible application as a gate stack for flexible electronic devices. Capacitance and impedance as a function of frequency are measured, which can be well accounted for by a simple circuit model identifying the local device components. The operation of a flexible field effect transistor based on graphene and the ion gel as a top gate stack is also demonstrated.-
dc.description.sponsorshipThis work was supported by “Human Resources Program in Energy Technology” of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), granted financial resource from the Ministry of Trade, Industry and Energy (No. 20164030201380), Basic Science Research Program (NRF-2015R1D1A1A01057417) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education of the Republic of Korea, and by the Ajou University research fund.-
dc.description.sponsorshipThis work was supported by “ Human Resources Program in Energy Technology ” of the Korea Institute of Energy Technology Evaluation and Planning ( KETEP ), granted financial resource from the Ministry of Trade, Industry and Energy (No. 20164030201380 ), Basic Science Research Program ( NRF-2015R1D1A1A01057417 ) through the National Research Foundation of Korea ( NRF ) funded by the Ministry of Education of the Republic of Korea , and by the Ajou University research fund.-
dc.language.isoeng-
dc.publisherElsevier B.V.-
dc.subject.meshElectrical characteristic-
dc.subject.meshFlexible device-
dc.subject.meshFlexible electronic devices-
dc.subject.meshFunction of frequency-
dc.subject.meshGate stacks-
dc.subject.meshIon gels-
dc.subject.meshPoly(vinylidene fluoride-co-hexafluoropropylene)-
dc.subject.meshSimple circuits-
dc.titleElectrical properties of ion gels based on PVDF-HFP applicable as gate stacks for flexible devices-
dc.typeArticle-
dc.citation.endPage504-
dc.citation.startPage500-
dc.citation.titleCurrent Applied Physics-
dc.citation.volume18-
dc.identifier.bibliographicCitationCurrent Applied Physics, Vol.18, pp.500-504-
dc.identifier.doi10.1016/j.cap.2018.02.017-
dc.identifier.scopusid2-s2.0-85042730955-
dc.identifier.urlhttp://www.elsevier.com/-
dc.subject.keywordField effect transistor-
dc.subject.keywordFlexible device-
dc.subject.keywordIon gel-
dc.subject.keywordIon liquid-
dc.subject.keywordPolymer-
dc.description.isoafalse-
dc.subject.subareaMaterials Science (all)-
dc.subject.subareaPhysics and Astronomy (all)-
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