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Showing results 1 to 10 of 345 (Search time: 0.0 seconds).

Graded crystalline HfO gate dielectric layer for high-k/Ge MOS gate stackoa mark
  • 2021-01-01
  • IEEE Journal of the Electron Devices Society, Vol.9, pp.295-299
  • Institute of Electrical and Electronics Engineers Inc.
Work-Function Variation and Delay Analysis in NAND and NOR Circuits using Gate Insulator Stack-based Dopingless Tunnel Field-effect Transistors
  • 2024-12-01
  • Journal of Semiconductor Technology and Science, Vol.24, pp.557-564
  • Institute of Electronics Engineers of Korea
Electrical properties of ion gels based on PVDF-HFP applicable as gate stacks for flexible devices
  • 2018-05-01
  • Current Applied Physics, Vol.18, pp.500-504
  • Elsevier B.V.
Ternary Logic Transistors Using Multi-Stacked 2D Electron Gas Channels in Ultrathin Oxide Heterostructuresoa mark
  • Choi, Ji Hyeon;
  • Seok, Tae Jun;
  • Kim, Sang June;
  • Dae, Kyun Seong;
  • Jang, Jae Hyuck;
  • Cho, Deok Yong;
  • Lee, Sang Woon;
  • Park, Tae Joo
  • 2025-02-10
  • Advanced Science, Vol.12
  • John Wiley and Sons Inc
Positive Interaction between Charge Trapping and Polarization Switching in Metal-Interlayer-Ferroelectric-Interlayer-Silicon (MIFIS) Ferroelectric Field-Effect Transistor
  • Choi, Hyojun;
  • Kim, Giuk;
  • Lee, Sangho;
  • Shin, Hunbeom;
  • Lim, Youngjin;
  • Kim, Kang;
  • Kim, Do Hyung;
  • Oh, Il Kwon;
  • Park, Sang Hee Ko;
  • Ahn, Jinho;
  • Jeon, Sanghun
  • 2024-01-01
  • IEEE Electron Device Letters, Vol.45, pp.2351-2354
  • Institute of Electrical and Electronics Engineers Inc.
Indirect Band Gap in Scrolled MoS2 Monolayersoa mark
  • Na, Jeonghyeon;
  • Park, Changyeon;
  • Lee, Chang Hoi;
  • Choi, Won Ryeol;
  • Choi, Sooho;
  • Lee, Jae Ung;
  • Yang, Woochul;
  • Cheong, Hyeonsik;
  • Campbell, Eleanor E.B.;
  • Jhang, Sung Ho
  • 2022-10-01
  • Nanomaterials, Vol.12
  • MDPI
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