Purpose: The gamma process was used to predict the remaining useful life of a bipolar junction transistor, which is a widely used electronic component.
<br>Methods: The proposed method consists of six major steps: 1) data collection via accelerated degradation test, 2) data conversion for the gamma process, 3) parameter estimation of the gamma process, 4) shape function estimation using a fitting procedure, 5) degradation model generation using the inverse power law and Arrhenius relation, and 6) prediction of the remaining useful life by estimating the failure criterion.
<br>Results: The degradation characteristic of a bipolar junction transistor is the beta (β) value (current gain), and the transistor is considered a failure when the β value deteriorates by 33.3%.
<br>Conclusion: This paper proposes a new method for predicting the remaining life of a bipolar junction transistor.
