감마과정 기반 양방향 접합 트랜지스터 잔여수명 예측

Abstract

Purpose: The gamma process was used to predict the remaining useful life of a bipolar junction transistor, which is a widely used electronic component. <br>Methods: The proposed method consists of six major steps: 1) data collection via accelerated degradation test, 2) data conversion for the gamma process, 3) parameter estimation of the gamma process, 4) shape function estimation using a fitting procedure, 5) degradation model generation using the inverse power law and Arrhenius relation, and 6) prediction of the remaining useful life by estimating the failure criterion. <br>Results: The degradation characteristic of a bipolar junction transistor is the beta (β) value (current gain), and the transistor is considered a failure when the β value deteriorates by 33.3%. <br>Conclusion: This paper proposes a new method for predicting the remaining life of a bipolar junction transistor.