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Low ligand field strength ion (I−) mediated 1D inorganic material MoI3: Synthesis and application to photo-detectors
  • Choi, Kyung Hwan;
  • Oh, Seungbae;
  • Chae, Sudong;
  • Jeong, Byung Joo;
  • Kim, Bum Jun;
  • Jeon, Jiho;
  • Lee, Sang Hoon;
  • Yoon, Sang Ok;
  • Woo, Chaeheon;
  • Dong, Xue;
  • Ghulam, Asghar;
  • Lim, Changmo;
  • Liu, Zhixiang;
  • Wang, Cong;
  • Junaid, Ali;
  • Lee, Jae Hyun;
  • Yu, Hak Ki;
  • Choi, Jae Young
  • 2021-02-05
  • Journal of Alloys and Compounds, Vol.853
  • Elsevier Ltd
Gate-tunable photodetector and ambipolar transistor implemented using a graphene/MoSe2 barristoroa mark
  • 2021-12-01
  • NPG Asia Materials, Vol.13
  • Nature Research
Self-Powered and High-Performance Alternating Current Photodetectors to enhance Broadband Photodetection
  • 2022-10-01
  • Advanced Electronic Materials, Vol.8
  • John Wiley and Sons Inc
Imaging Spatial Distribution of Photogenerated Carriers in Monolayer MoS2with Kelvin Probe Force Microscopy
  • 2022-06-08
  • ACS Applied Materials and Interfaces, Vol.14, pp.26295-26302
  • American Chemical Society
Highly flexible deep-ultraviolet photodetectors using amorphous gallium oxide thin films grown by atomic layer deposition
  • 2022-12-01
  • Materials Today Communications, Vol.33
  • Elsevier Ltd
High Responsivity β-Ga2O3 Metal-Semiconductor-Metal Solar-Blind Photodetectors with Ultraviolet Transparent Graphene Electrodes
  • 2018-03-21
  • ACS Photonics, Vol.5, pp.1123-1128
  • American Chemical Society
CdSe/ZnS quantum dot encapsulated MoS2 phototransistor for enhanced radiation hardnessoa mark
  • 2019-12-01
  • Scientific Reports, Vol.9
  • Nature Publishing Group
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