Notable progress achieved in studying MoS2 based phototransistors reveals the great potential to be applicable in various field of photodetectors, and to further expand it, a durability study of MoS2 phototransistors in harsh environments is highly required. Here, we investigate effects of gamma rays on the characteristics of MoS2 phototransistors and improve its radiation hardness by incorporating CdSe/ZnS quantum dots as an encapsulation layer. A 73.83% decrease in the photoresponsivity was observed after gamma ray irradiation of 400 Gy, and using a CYTOP and CdSe/ZnS quantum dot layer, the photoresponsivity was successfully retained at 75.16% on average after the gamma ray irradiation. Our results indicate that the CdSe/ZnS quantum dots having a high atomic number can be an effective encapsulation method to improve radiation hardness and thus to maintain the performance of the MoS2 phototransistor.
This research was supported by the National Research Foundation of Korea (NRF) grant funded by the Ministry of Education (MOE) (NRF-2018R1D1A1B07048572) and by the Ministry of Science, ICT & Future Planning (MSIP) (NRF-2015M2B2A9033138). This work was also supported by \u201cHuman Resources Program in Energy Technology\u201d of the Korea Institute of Energy Technology Evaluation and Planning (KETEP), granted financial resource from the Ministry of Trade, Industry & Energy, Republic of Korea (No. 20164030201380).
