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Showing results 1 to 10 of 5847 (Search time: 0.0 seconds).

Optimization of Dual-workfunction Line Tunnel Field-effect Transistor with Island Source Junction
  • Yun, Chaewon;
  • Kim, Sangwan;
  • Cho, Seongjae;
  • Cho, Il Hwan;
  • Kim, Hyunwoo;
  • Kim, Jang Hyun;
  • Kim, Garam
  • 2023-08-01
  • Journal of Semiconductor Technology and Science, Vol.23, pp.207-214
  • Institute of Electronics Engineers of Korea
Effects of Material and Doping Profile Engineering of Source Junction on Line Tunneling FET Operations
  • 2023-08-01
  • Journal of Semiconductor Technology and Science, Vol.23, pp.228-235
  • Institute of Electronics Engineers of Korea
Demonstration of a Frequency Doubler Using a Tunnel Field-Effect Transistor with Dual Pocket Dopingoa mark
  • 2023-12-01
  • Electronics (Switzerland), Vol.12
  • Multidisciplinary Digital Publishing Institute (MDPI)
Anisotropic Diffusion of Charges on Au Nanoclusters Embedded in Al2O3 Dielectrics
  • Park, Jinhong;
  • Choi, Jinhyeok;
  • Choi, Moonkang;
  • Ryu, Hyunyeol;
  • Ryu, Hanyoul;
  • Lee, Hyungwoo;
  • Lee, Minbaek
  • 2020-03-01
  • Physica Status Solidi - Rapid Research Letters, Vol.14
  • Wiley-VCH Verlag
Rigorous study on hump phenomena in surrounding channel nanowire (SCNW) tunnel field-effect transistor (TFET)oa mark
  • 2020-05-01
  • Applied Sciences (Switzerland), Vol.10
  • MDPI AG
Frequency doubler utilizing hetero gate dielectric tunnel field-effect transistor
  • 2024-04-01
  • Physica Scripta, Vol.99
  • Institute of Physics
Work-Function Variation and Delay Analysis in NAND and NOR Circuits using Gate Insulator Stack-based Dopingless Tunnel Field-effect Transistors
  • 2024-12-01
  • Journal of Semiconductor Technology and Science, Vol.24, pp.557-564
  • Institute of Electronics Engineers of Korea
Analysis and Prediction of Nanowire TFET’s Work Function Variation
  • 2024-04-01
  • Journal of Semiconductor Technology and Science, Vol.24, pp.96-104
  • Institute of Electronics Engineers of Korea
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