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Showing results 1 to 10 of 5406 (Search time: 0.0 seconds).

Comparative analysis of junctionless and inversion-mode nanosheet FETs for self-heating effect mitigation
  • 2024-01-01
  • Semiconductor Science and Technology, Vol.39
  • Institute of Physics
Asymmetric Double-Gate β-Ga2O3 Nanomembrane Field-Effect Transistor for Energy-Efficient Power Devices
  • Ma, Jiyeon;
  • Cho, Hyung Jun;
  • Heo, Junseok;
  • Kim, Sunkook;
  • Yoo, Geonwook
  • 2019-06-01
  • Advanced Electronic Materials, Vol.5
  • Blackwell Publishing Ltd
Impact of Work-Function Variation in Ferroelectric Field-Effect Transistoroa mark
  • 2024-01-01
  • IEEE Journal of the Electron Devices Society, Vol.12, pp.779-784
  • Institute of Electrical and Electronics Engineers Inc.
Effects of Material and Doping Profile Engineering of Source Junction on Line Tunneling FET Operations
  • 2023-08-01
  • Journal of Semiconductor Technology and Science, Vol.23, pp.228-235
  • Institute of Electronics Engineers of Korea
Surface Passivation of Layered MoSe2 via van der Waals Stacking of Amorphous Hydrocarbon
  • Lee, Do Hyeon;
  • Dongquoc, Viet;
  • Hong, Seongin;
  • Kim, Seung Il;
  • Kim, Eunjeong;
  • Cho, Su yeon;
  • Oh, Chang Hwan;
  • Je, Yeonjin;
  • Kwon, Mi Ji;
  • Hoang Vo, Anh;
  • Seo, Dong Bum;
  • Lee, Jae Hyun;
  • Kim, Sunkook;
  • Kim, Eui Tae;
  • Park, Jun Hong
  • 2022-10-01
  • Small, Vol.18
  • John Wiley and Sons Inc
Ternary Logic Transistors Using Multi-Stacked 2D Electron Gas Channels in Ultrathin Oxide Heterostructuresoa mark
  • Choi, Ji Hyeon;
  • Seok, Tae Jun;
  • Kim, Sang June;
  • Dae, Kyun Seong;
  • Jang, Jae Hyuck;
  • Cho, Deok Yong;
  • Lee, Sang Woon;
  • Park, Tae Joo
  • 2025-02-10
  • Advanced Science, Vol.12
  • John Wiley and Sons Inc
Growth of bilayer MoS2 flakes by reverse flow chemical vapor deposition
  • 2023-09-01
  • Materials Letters, Vol.346
  • Elsevier B.V.
Experimental Analysis on the Interaction Between Interface Trap Charges and Polarization on the Memory Window of Metal-Ferroelectric-Insulator-Si (MFIS) FeFET
  • Kim, Giuk;
  • Choi, Hyojun;
  • Lee, Sangho;
  • Shin, Hunbeom;
  • Lee, Sangmok;
  • Nam, Yunseok;
  • Kang, Hyunjun;
  • Shin, Seokjoong;
  • Kim, Hoon;
  • Lim, Youngjin;
  • Kim, Kang;
  • Oh, Il Kwon;
  • Ko Park, Sang Hee;
  • Ahn, Jinho;
  • Jeon, Sanghun
  • 2024-01-01
  • IEEE Transactions on Electron Devices, Vol.71, pp.6627-6632
  • Institute of Electrical and Electronics Engineers Inc.
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