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Showing results 1 to 10 of 560 (Search time: 0.0 seconds).

Kinetically Stabilized Hafnia Ferroelectric of Al-Doped HfO2 Film by Fast Ramping and Fast Cooling Process
  • Zhang, Lingwei;
  • Kim, Giuk;
  • Lee, Sangho;
  • Shin, Hunbeom;
  • Lim, Youngjin;
  • Kim, Kang;
  • Oh, Il Kwon;
  • Ko Park, Sang Hee;
  • Ahn, Jinho;
  • Jeon, Sanghun
  • 2024-01-01
  • IEEE Transactions on Electron Devices, Vol.71, pp.7398-7404
  • Institute of Electrical and Electronics Engineers Inc.
Large-Scale Assembly of Peptide-Based Hierarchical Nanostructures and Their Antiferroelectric Properties
  • Lee, Yonghun;
  • Kim, Kyung Won;
  • Duong, Nguyen Xuan;
  • Park, Hyeok;
  • Park, Jinhong;
  • Ahn, Chang Won;
  • Park, In Woo;
  • Jang, Seok Cheon;
  • Kim, Dong Hoe;
  • Lee, Minbaek;
  • Chung, Woo Jae;
  • Kim, Tae Heon;
  • Lee, Hyungwoo;
  • Heo, Kwang
  • 2020-11-01
  • Small, Vol.16
  • Wiley-VCH Verlag
Systematic determination of the optimized Zr content of Ba(ZrxTi1-x)O3 with high dielectric constant at room temperature for high-voltage system applicationoa mark
  • Kim, Jandi;
  • Seo, Ji Hye;
  • Lee, Sang Heun;
  • Cho, Myunghee;
  • Kwak, Hun;
  • Cheon, Ran Sae;
  • Cho, Seungchan;
  • Cho, Sung Beom;
  • Kim, Minkee;
  • Lee, Yoon Seok;
  • Kim, Yangdo;
  • Choi, Moonhee
  • 2024-05-01
  • Journal of the Korean Ceramic Society, Vol.61, pp.391-401
  • Springer
Impact of Work-Function Variation in Ferroelectric Field-Effect Transistoroa mark
  • 2024-01-01
  • IEEE Journal of the Electron Devices Society, Vol.12, pp.779-784
  • Institute of Electrical and Electronics Engineers Inc.
Effects of Substrate and Annealing Conditions on the Ferroelectric Properties of Non-Doped HfO2 Deposited by RF Plasma Sputteroa mark
  • 2024-09-01
  • Nanomaterials, Vol.14
  • Multidisciplinary Digital Publishing Institute (MDPI)
Ferroelectric α-In2Se3 Wrapped-Gate β-Ga2O3 Field-Effect Transistors for Dynamic Threshold Voltage Control
  • Yang, Jeong Yong;
  • Yeom, Min Jae;
  • Park, Youngseo;
  • Heo, Junseok;
  • Yoo, Geonwook
  • 2021-08-01
  • Advanced Electronic Materials, Vol.7
  • John Wiley and Sons Inc
Positive Interaction between Charge Trapping and Polarization Switching in Metal-Interlayer-Ferroelectric-Interlayer-Silicon (MIFIS) Ferroelectric Field-Effect Transistor
  • Choi, Hyojun;
  • Kim, Giuk;
  • Lee, Sangho;
  • Shin, Hunbeom;
  • Lim, Youngjin;
  • Kim, Kang;
  • Kim, Do Hyung;
  • Oh, Il Kwon;
  • Park, Sang Hee Ko;
  • Ahn, Jinho;
  • Jeon, Sanghun
  • 2024-01-01
  • IEEE Electron Device Letters, Vol.45, pp.2351-2354
  • Institute of Electrical and Electronics Engineers Inc.
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