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to 10 of 577 (Search time: 0.0 seconds).
Large-Scale Assembly of Peptide-Based Hierarchical Nanostructures and Their Antiferroelectric Properties
Lee, Yonghun;
Kim, Kyung Won;
Duong, Nguyen Xuan;
Park, Hyeok;
Park, Jinhong;
Ahn, Chang Won;
Park, In Woo;
Jang, Seok Cheon;
Kim, Dong Hoe;
Lee, Minbaek;
Chung, Woo Jae;
Kim, Tae Heon;
Lee, Hyungwoo
;
Heo, Kwang
2020-11-01
Small, Vol.16
Wiley-VCH Verlag
Impact of Work-Function Variation in Ferroelectric Field-Effect Transistor
oa mark
Yeon Jung, Su;
Kim, Hyunwoo;
Lee, Jongmin
;
Hyun Kim, Jang
2024-01-01
IEEE Journal of the Electron Devices Society, Vol.12, pp.779-784
Institute of Electrical and Electronics Engineers Inc.
Effects of Substrate and Annealing Conditions on the Ferroelectric Properties of Non-Doped HfO2 Deposited by RF Plasma Sputter
oa mark
Lim, Seokwon;
Ahn, Yeonghwan
;
Won, Beomho;
Lee, Suwan;
Park, Hayoung;
Kumar, Mohit
;
Seo, Hyungtak
2024-09-01
Nanomaterials, Vol.14
Multidisciplinary Digital Publishing Institute (MDPI)
Ferroelectric α-In2Se3 Wrapped-Gate β-Ga2O3 Field-Effect Transistors for Dynamic Threshold Voltage Control
Yang, Jeong Yong;
Yeom, Min Jae;
Park, Youngseo;
Heo, Junseok
;
Yoo, Geonwook
2021-08-01
Advanced Electronic Materials, Vol.7
John Wiley and Sons Inc
Positive Interaction between Charge Trapping and Polarization Switching in Metal-Interlayer-Ferroelectric-Interlayer-Silicon (MIFIS) Ferroelectric Field-Effect Transistor
Choi, Hyojun;
Kim, Giuk;
Lee, Sangho;
Shin, Hunbeom;
Lim, Youngjin;
Kim, Kang;
Kim, Do Hyung;
Oh, Il Kwon
;
Park, Sang Hee Ko;
Ahn, Jinho;
Jeon, Sanghun
2024-01-01
IEEE Electron Device Letters, Vol.45, pp.2351-2354
Institute of Electrical and Electronics Engineers Inc.
Reconfigurable Radio-Frequency High-Electron Mobility Transistors via Ferroelectric-Based Gallium Nitride Heterostructure
Yang, Jeong Yong;
Yeom, Min Jae;
Lee, Jaeyong;
Lee, Kyusang;
Park, Changkun;
Heo, Junseok
;
Yoo, Geonwook
2022-09-01
Advanced Electronic Materials, Vol.8
John Wiley and Sons Inc
Effects of plasma power on ferroelectric properties of HfO2-ZrO2 nanolaminates produced by plasma enhanced atomic layer deposition
Ahn, Yeonghwan
;
Jeon, Yerin;
Lim, Seokwon;
Kim, Jiwoong;
Kim, Jisu;
Duy, Le Thai;
Seo, Hyungtak
2023-04-01
Surfaces and Interfaces, Vol.37
Elsevier B.V.
First Demonstration of Thermally Stable Zr:HfO2Ferroelectrics via Inserting AlN Interlayer
Lee, Sangmok;
Kim, Giuk;
Lee, Sangho;
Shin, Hunbeom;
Lim, Youngjin;
Kim, Kang;
Kim, Do Hyung;
Oh, Il Kwon
;
Ko Park, Sang Hee;
Ahn, Jinho;
Jeon, Sanghun
2024-01-01
IEEE Electron Device Letters, Vol.45, pp.1578-1581
Institute of Electrical and Electronics Engineers Inc.
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