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Low-threshold Optical Bistability Based on Bound States in the Continuum
  • 2022-02-01
  • Current Optics and Photonics, Vol.6, pp.10-14
  • Optical Society of Korea
Design of p-WSe2/n-Ge Heterojunctions for High-Speed Broadband Photodetectors
  • Lee, Chan Ho;
  • Park, Youngseo;
  • Youn, Sukhyeong;
  • Yeom, Min Jae;
  • Kum, Hyun S.;
  • Chang, Jiwon;
  • Heo, Junseok;
  • Yoo, Geonwook
  • 2022-01-01
  • Advanced Functional Materials, Vol.32
  • John Wiley and Sons Inc
Growth mechanism and electrical properties of tungsten films deposited by plasma-enhanced atomic layer deposition with chloride and metal organic precursors
  • Lee, Yujin;
  • Seo, Seunggi;
  • Nam, Taewook;
  • Lee, Hyunho;
  • Yoon, Hwi;
  • Sun, Sangkyu;
  • Oh, Il Kwon;
  • Lee, Sanghun;
  • Shong, Bonggeun;
  • Seo, Jin Hyung;
et al
  • 2021-12-01
  • Applied Surface Science, Vol.568
  • Elsevier B.V.
Low subthreshold slope AlGaN/GaN MOS-HEMT with spike-annealed HfO2 gate dielectricoa mark
  • Yeom, Min Jae;
  • Yang, Jeong Yong;
  • Lee, Chan Ho;
  • Heo, Junseok;
  • Chung, Roy Byung Kyu;
  • Yoo, Geonwook
  • 2021-12-01
  • Micromachines, Vol.12
  • MDPI
Visible and infrared dual-band imaging via Ge/MoS2van der Waals heterostructureoa mark
  • Hwang, Aujin;
  • Park, Minseong;
  • Park, Youngseo;
  • Shim, Yeongseok;
  • Youn, Sukhyeong;
  • Lee, Chan Ho;
  • Jeong, Han Beom;
  • Jeong, Hu Young;
  • Chang, Jiwon;
  • Lee, Kyusang;
et al
  • 2021-12-01
  • Science Advances, Vol.7
  • American Association for the Advancement of Science
Graphene perfect absorber design based on an approach of mimicking a one-port system in an asymmetric single resonatoroa mark
  • 2021-09-13
  • Optics Express, Vol.29, pp.29631-29640
  • The Optical Society
Controllable size and crystallinity of Ru nanoparticles on a carbon support synthesized by fluidized bed reactor-atomic layer deposition for enhanced hydrogen oxidation activityoa mark
  • Lee, Woo Jae;
  • Bera, Susanta;
  • Woo, Hyun Jae;
  • An, Jung Won;
  • Bae, Jong Seong;
  • Oh, Il Kwon;
  • Kwon, Se Hun
  • 2021-08-28
  • Journal of Materials Chemistry A, Vol.9, pp.17223-17230
  • Royal Society of Chemistry
Reaction Mechanisms of Non-hydrolytic Atomic Layer Deposition of Al2O3with a Series of Alcohol Oxidants
  • Seo, Seunggi;
  • Woo, Whang Je;
  • Lee, Yujin;
  • Yoon, Hwi;
  • Kim, Miso;
  • Oh, Il Kwon;
  • Chung, Seung Min;
  • Kim, Hyungjun;
  • Shong, Bonggeun
  • 2021-08-26
  • Journal of Physical Chemistry C, Vol.125, pp.18151-18160
  • American Chemical Society
Ferroelectric α-In2Se3 Wrapped-Gate β-Ga2O3 Field-Effect Transistors for Dynamic Threshold Voltage Control
  • Yang, Jeong Yong;
  • Yeom, Min Jae;
  • Park, Youngseo;
  • Heo, Junseok;
  • Yoo, Geonwook
  • 2021-08-01
  • Advanced Electronic Materials, Vol.7
  • John Wiley and Sons Inc
Hydrogen Barriers Based on Chemical Trapping Using Chemically Modulated Al2O3Grown by Atomic Layer Deposition for InGaZnO Thin-Film Transistors
  • Lee, Yujin;
  • Nam, Taewook;
  • Seo, Seunggi;
  • Yoon, Hwi;
  • Oh, Il Kwon;
  • Lee, Chong Hwon;
  • Yoo, Hyukjoon;
  • Kim, Hyun Jae;
  • Choi, Wonjun;
  • Im, Seongil;
et al
  • 2021-05-05
  • ACS Applied Materials and Interfaces, Vol.13, pp.20349-20360
  • American Chemical Society
Self-Formation of Superhydrophobic Surfaces through Interfacial Energy Engineering between Liquids and Particles
  • Yasmeen, Sumaira;
  • Yoon, Jaehong;
  • Moon, Chan Hui;
  • Khan, Rizwan;
  • Gaiji, Houda;
  • Shin, Sangwoo;
  • Oh, Il Kwon;
  • Lee, Han Bo Ram
  • 2021-05-04
  • Langmuir, Vol.37, pp.5356-5363
  • American Chemical Society
Effective Dark Current Suppression for High-Detectivity Organic Near-Infrared Photodetectors Using a Non-Fullerene Acceptor
  • 2021-03-10
  • ACS Applied Materials and Interfaces, Vol.13, pp.11144-11150
  • American Chemical Society
Pt-Decorated Graphene Gate AlGaN/GaN MIS-HEMT for Ultrahigh Sensitive Hydrogen Gas Detection
  • Ahn, Jungho;
  • Kim, Dahee;
  • Park, Kyung Ho;
  • Yoo, Geonwook;
  • Heo, Junseok
  • 2021-03-01
  • IEEE Transactions on Electron Devices, Vol.68, pp.1255-1261
  • Institute of Electrical and Electronics Engineers Inc.
Ultrahigh Deep-Ultraviolet Responsivity of a β-Ga2O3/MgO Heterostructure-Based Phototransistor
  • Ahn, Jungho;
  • Ma, Jiyeon;
  • Lee, Doeon;
  • Lin, Qiubao;
  • Park, Youngseo;
  • Lee, Oukjae;
  • Sim, Sangwan;
  • Lee, Kyusang;
  • Yoo, Geonwook;
  • Heo, Junseok
  • 2021-02-17
  • ACS Photonics, Vol.8, pp.557-566
  • American Chemical Society
Interface trap-induced temperature dependent hysteresis and mobility in β-Ga2O3 field-effect transistorsoa mark
  • 2021-02-01
  • Nanomaterials, Vol.11, pp.1-10
  • MDPI AG
Ultra-compact integrated terahertz modulator based on a graphene metasurface
  • 2021-02-01
  • Optics Letters, Vol.46, pp.605-608
  • The Optical Society
Graded crystalline HfO gate dielectric layer for high-k/Ge MOS gate stackoa mark
  • 2021-01-01
  • IEEE Journal of the Electron Devices Society, Vol.9, pp.295-299
  • Institute of Electrical and Electronics Engineers Inc.
A comparative study of charge trapping effect in p-type MoTe2 and WSe2 FETs using pulsed current-voltage measurements
  • Yang, Jeong Yong;
  • Lee, Chan Ho;
  • Oh, Young Taek;
  • Ma, Jiyeon;
  • Heo, Junseok;
  • Yoo, Geonwook
  • 2021-01-01
  • Japanese Journal of Applied Physics, Vol.60
  • IOP Publishing Ltd
Hetero-integration enables fast switching time-of-flight sensors for light detection and rangingoa mark
  • Park, Minseong;
  • Baek, Yongmin;
  • Dinare, Mesgana;
  • Lee, Doeon;
  • Park, Kyung Ho;
  • Ahn, Jungho;
  • Kim, Dahee;
  • Medina, Joseff;
  • Choi, Won Jin;
  • Kim, Sihwan;
et al
  • 2020-12-01
  • Scientific Reports, Vol.10
  • Nature Research
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