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Bias-stress-stable sub-1.5V oxide thin-film transistors via synergistic composition of sol-gel quaternary high-k oxide dielectricsoa mark
  • Baek, Seokhyeon;
  • Choi, Jun Gyu;
  • Lee, Won June;
  • Kwak, Taehyun;
  • Jo, Yong Ryun;
  • Park, Sungjun
  • 2024-08-05
  • Journal of Alloys and Compounds, Vol.994
  • Elsevier Ltd
Influence of UV/Ozone Treatment on Threshold Voltage Modulation in Sol–Gel IGZO Thin-Film Transistors
  • Kim, Wonsik;
  • Lee, Won June;
  • Kwak, Taehyun;
  • Baek, Seokhyeon;
  • Lee, Seung Hoon;
  • Park, Sungjun
  • 2022-04-01
  • Advanced Materials Interfaces, Vol.9
  • John Wiley and Sons Inc
The Significance of an In Situ ALD Al2O3 Stacked Structure for p-Type SnO TFT Performance and Monolithic All-ALD-Channel CMOS Inverter Applicationsoa mark
  • 2023-04-01
  • Advanced Electronic Materials, Vol.9
  • John Wiley and Sons Inc
Ultrahigh-Speed In-Memory Electronics Enabled by Proximity-Oxidation-Evolved Metal Oxide Redox Transistors
  • 2022-05-01
  • Advanced Materials, Vol.34
  • John Wiley and Sons Inc
Review of Material Properties of Oxide Semiconductor Thin Films Grown by Atomic Layer Deposition for Next-Generation 3D Dynamic Random-Access Memory Devices
  • Choi, Ae Rim;
  • Lim, Dong Hyun;
  • Shin, So Yeon;
  • Kang, Hye Joo;
  • Kim, Dohee;
  • Kim, Ja Yong;
  • Ahn, Youngbae;
  • Ryu, Seung Wook;
  • Oh, Il Kwon
  • 2024-03-12
  • Chemistry of Materials, Vol.36, pp.2194-2219
  • American Chemical Society
Hydrogen Barriers Based on Chemical Trapping Using Chemically Modulated Al2O3Grown by Atomic Layer Deposition for InGaZnO Thin-Film Transistors
  • Lee, Yujin;
  • Nam, Taewook;
  • Seo, Seunggi;
  • Yoon, Hwi;
  • Oh, Il Kwon;
  • Lee, Chong Hwon;
  • Yoo, Hyukjoon;
  • Kim, Hyun Jae;
  • Choi, Wonjun;
  • Im, Seongil;
  • Yang, Joon Young;
  • Choi, Dong Wook;
  • Yoo, Choongkeun;
  • Kim, Ho Jin;
  • Kim, Hyungjun
  • 2021-05-05
  • ACS Applied Materials and Interfaces, Vol.13, pp.20349-20360
  • American Chemical Society
Multivalued logic devices via directly patterned sol-gel metal oxide materials
  • 김원식
  • 2023-08
  • The Graduate School, Ajou University
Approaching the Nernst Detection Limit in an Electrolyte-Gated Metal Oxide Transistor
  • 2021-01-01
  • IEEE Electron Device Letters, Vol.42, pp.50-53
  • Institute of Electrical and Electronics Engineers Inc.
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