Recently, significant advancements have been made in the development of multi-valued logic (MVL) devices, including ternary inverters because of the issues of power consumption and processing speed caused by integrated circuits (ICs) integration improvement. In this study, we developed a ternary inverter fabricated by sol-gel metal oxide by self-assembled monolayer (SAM) process. First, we demonstrate that the self-aligned (directly patterned) sol-gel metal oxide process can manufacture thin film transistors (TFTs) on behalf of photolithography. Second, we prove how to control Vth by adjusting the oxygen vacancy of metal oxide channels through UVO treatment. Finally, we fabricate the high- performance metal oxide ternary inverter. These results suggest processes and materials that can fabricate high-performance ternary inverters with metal oxide semiconductors, and the possibility of a large-area process of ternary inverters.
