Ajou University repository

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Showing results 1 to 10 of 1627 (Search time: 0.0 seconds).

Hybrid Volatile/Nonvolatile Resistive Switching Memory in Ternary Metal Oxide Enabling Hopfield Neural Classification
  • 2023-02-28
  • ACS Applied Electronic Materials, Vol.5, pp.896-904
  • American Chemical Society
Vanadium oxide thin film deposited on Si by atomic layer deposition for non-volatile resistive switching memory devices
  • 2023-12-01
  • Applied Surface Science, Vol.639
  • Elsevier B.V.
ExTENDS: Efficient Data Placement and Management for Next Generation PCM-Based Storage Systemsoa mark
  • 2019-01-01
  • IEEE Access, Vol.7, pp.148718-148730
  • Institute of Electrical and Electronics Engineers Inc.
Ultrahigh-Speed In-Memory Electronics Enabled by Proximity-Oxidation-Evolved Metal Oxide Redox Transistors
  • 2022-05-01
  • Advanced Materials, Vol.34
  • John Wiley and Sons Inc
HyFAT: Affordable hybrid fast address translating device driver for multichannel-based flash devices
  • 2019-05-01
  • IEEE Transactions on Consumer Electronics, Vol.65, pp.142-149
  • Institute of Electrical and Electronics Engineers Inc.
A Recovery Technique for Flash Memory Using Shadow Paging
  • ABDULGHAFUR, ALAHMADI ABDULHADI
  • 2015-08
  • The Graduate School, Ajou University
Multilevel Nonvolatile Memory by CMOS-Compatible and Transfer-free Amorphous Boron Nitride Filmoa mark
  • Sattari-Esfahlan, Seyed Mehdi;
  • Hyun, Sang Hwa;
  • Moon, Ji Yun;
  • Heo, Keun;
  • Lee, Jae Hyun
  • 2024-11-26
  • ACS Applied Electronic Materials, Vol.6, pp.7781-7790
  • American Chemical Society
Ink: In-kernel key-value storage with persistent memoryoa mark
  • 2020-11-01
  • Electronics (Switzerland), Vol.9, pp.1-22
  • MDPI AG
Electric Field-Induced Area Scalability toward the Multilevel Resistive Switching
  • 2021-09-01
  • Advanced Materials Interfaces, Vol.8
  • John Wiley and Sons Inc
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