Exploiting the multistate characteristic, we have engineered a single memristor based on amorphous boron nitride (a-BN) capable of rivaling the logic capacity of multiple field-effect transistors (FETs). The quintessence of our work is the realization of quinary resistive switching with five distinct resistive states enabled by a wafer-scale, chemical vapor deposition (CVD) grown a-BN thin film. This feat is achieved directly on the substrate, eschewing the need for transfer processes and leveraging low-temperature synthesis. The device exhibits an exceptional On/Off ratio of ∼108, sustained over a significant cycling lifespan. We uncover the intricate interplay between the a-BN channel thickness and the quantized resistive states, revealing a precision-controlled resistive landscape. This capability addresses the production and transfer bottlenecks associated with two-dimensional materials, setting the stage for our a-BN-based memory device to advance the frontiers of ultrahigh-density data storage and computing systems.
This research was supported by the National Research Foundation (NRF) fund of Korea (NRF-2021R1A2C2012649, RS-2024-00452558, and RS-2023-00221295). The authors are thankful for the comments from Prof. Deji Akinwande from the University of Texas at Austin and technical supports from Prof. Mi-young Kim from Seoul National University. The authors acknowledge Vienna University of Technology Library for financial support through its Open Access Funding Programme.
