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Multilevel Nonvolatile Memory by CMOS-Compatible and Transfer-free Amorphous Boron Nitride Filmoa mark
  • Sattari-Esfahlan, Seyed Mehdi;
  • Hyun, Sang Hwa;
  • Moon, Ji Yun;
  • Heo, Keun;
  • Lee, Jae Hyun
  • 2024-11-26
  • ACS Applied Electronic Materials, Vol.6, pp.7781-7790
  • American Chemical Society
Electric Field-Induced Area Scalability toward the Multilevel Resistive Switching
  • 2021-09-01
  • Advanced Materials Interfaces, Vol.8
  • John Wiley and Sons Inc
Vanadium oxide thin film deposited on Si by atomic layer deposition for non-volatile resistive switching memory devices
  • 2023-12-01
  • Applied Surface Science, Vol.639
  • Elsevier B.V.
Collective Control of Potential-Constrained Oxygen Vacancies in Oxide Heterostructures for Gradual Resistive Switching
  • Jeon, Jaeyoung;
  • Eom, Kitae;
  • Lee, Minkyung;
  • Kim, Sungkyu;
  • Lee, Hyungwoo
  • 2023-09-13
  • Small, Vol.19
  • John Wiley and Sons Inc
Electric field-triggered metal-insulator transition resistive switching of bilayered multiphasic VOx
  • Won, Seokjae;
  • Lee, Sang Yeon;
  • Hwang, Jungyeon;
  • Park, Jucheol;
  • Seo, Hyungtak
  • 2018-01-01
  • Electronic Materials Letters, Vol.14, pp.14-22
  • The Korean Institute of Metals and Materials
Hybrid Volatile/Nonvolatile Resistive Switching Memory in Ternary Metal Oxide Enabling Hopfield Neural Classification
  • 2023-02-28
  • ACS Applied Electronic Materials, Vol.5, pp.896-904
  • American Chemical Society
Ion Beam-Mediated Defect Engineering in TiOxThin Films for Controlled Resistive Switching Property and Application
  • Hasina, Dilruba;
  • Kumar, Mohit;
  • Singh, Ranveer;
  • Mollick, Safiul Alam;
  • Mitra, Anirban;
  • Srivastava, Sanjeev Kumar;
  • Luong, Minh Anh;
  • Som, Tapobrata
  • 2021-09-28
  • ACS Applied Electronic Materials, Vol.3, pp.3804-3814
  • American Chemical Society
Highly uniform resistive switching characteristics of Ti/TaOx/ITO memristor devices for neuromorphic system
  • 2023-10-25
  • Journal of Alloys and Compounds, Vol.961
  • Elsevier Ltd
Site-Specific Regulated Memristors via Electron-Beam-Induced Functionalization of HfO2
  • 2022-02-01
  • Small, Vol.18
  • John Wiley and Sons Inc
Highly Uniform Resistive Switching Performances Using Two-Dimensional Electron Gas at a Thin-Film Heterostructure for Conductive Bridge Random Access Memory
  • 2019-08-21
  • ACS Applied Materials and Interfaces, Vol.11, pp.30028-30036
  • American Chemical Society
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