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to 10 of 197 (Search time: 0.0 seconds).
Low-Temperature Direct Growth of Amorphous Boron Nitride Films for High-Performance Nanoelectronic Device Applications
oa mark
Sattari-Esfahlan, Seyed Mehdi;
Kim, Hyoung Gyun;
Hyun, Sang Hwa;
Choi, Jun Hui;
Hwang, Hyun Sik;
Kim, Eui Tae;
Park, Hyeong Gi;
Lee, Jae Hyun
2023-02-08
ACS Applied Materials and Interfaces, Vol.15, pp.7274-7281
American Chemical Society
Multilevel Nonvolatile Memory by CMOS-Compatible and Transfer-free Amorphous Boron Nitride Film
oa mark
Sattari-Esfahlan, Seyed Mehdi;
Hyun, Sang Hwa;
Moon, Ji Yun;
Heo, Keun;
Lee, Jae Hyun
2024-11-26
ACS Applied Electronic Materials, Vol.6, pp.7781-7790
American Chemical Society
Thru-Hole Epitaxy: A Highway for Controllable and Transferable Epitaxial Growth
oa mark
Jang, Dongsoo;
Ahn, Chulwoo;
Lee, Youngjun;
Lee, Seungjun;
Lee, Hyunkyu;
Kim, Donghoi;
Kim, Yongsun;
Park, Ji Yong
;
Kwon, Young Kyun;
Choi, Jaewu;
Kim, Chinkyo
2023-02-03
Advanced Materials Interfaces, Vol.10
John Wiley and Sons Inc
Controlled growth of highly stable and conducting Ge core/ BCN shell nanowire
Choi, Jun Hui;
Moon, Ji Yun;
Lee, Jae Hyun
2024-05-01
Ceramics International, Vol.50, pp.15994-15999
Elsevier Ltd
전압 제어에 의한 질화붕소-그래핀 이종구조 양자광원
유미향
2020-08
The Graduate School, Ajou University
게르마늄/BCN 코어/쉘 나노와이어의 합성 및 특성에 관한 연구
황현식
2022-08
The Graduate School, Ajou University
제일원리 계산이론을 통한 육각형 질화붕소 양자광원에 대한 곡률 효과
임동규
2021-08
The Graduate School, Ajou University
Low subthreshold slope AlGaN/GaN MOS-HEMT with spike-annealed HfO2 gate dielectric
oa mark
Yeom, Min Jae;
Yang, Jeong Yong;
Lee, Chan Ho;
Heo, Junseok
;
Chung, Roy Byung Kyu;
Yoo, Geonwook
2021-12-01
Micromachines, Vol.12
MDPI
육방정계 질화 붕소 (h-BN) 원자 결함으로부터 방출된 단일 광자의 Stark shift 연구
노기창
2019-08
The Graduate School, Ajou University
Design of softened polystyrene for crack- and contamination-free large-area graphene transfer
Nasir, Tuqeer;
Kim, Bum Jun;
Kim, Kwan Woo;
Lee, Sang Hoon;
Lim, Hyung Kyu;
Lee, Dong Kyu;
Jeong, Byung Joo;
Kim, Hak Chul;
Yu, Hak Ki
;
Choi, Jae Young
2018-12-14
Nanoscale, Vol.10, pp.21865-21870
Royal Society of Chemistry
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