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Controlled growth of highly stable and conducting Ge core/ BCN shell nanowire
  • Choi, Jun Hui ;
  • Moon, Ji Yun ;
  • Lee, Jae Hyun
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Publication Year
2024-05-01
Publisher
Elsevier Ltd
Citation
Ceramics International, Vol.50, pp.15994-15999
Keyword
BCNCore@shell nanowiresEnergy storage applicationsGe nanowireHigh stability
Mesh Keyword
Boron carbon nitrideControlled growthCore-shell nanowiresElectrical conductivityEnergy storage applicationsGe nanowireGermaniums (Ge)High stabilityHighly stablesStorage capacity
All Science Classification Codes (ASJC)
Electronic, Optical and Magnetic MaterialsCeramics and CompositesProcess Chemistry and TechnologySurfaces, Coatings and FilmsMaterials Chemistry
Abstract
Germanium-based nanomaterials have gained prominence as potential enhancers of energy harvesting efficiency and storage capacity, attributed to their superior electrical conductivity, mobility, and lithium-ion storage aptitude. However, their practical application is often hindered by chemical and physical instabilities. In this study, we introduce a facile synthesis method for boron-carbon-nitride (BCN) shell-coated germanium nanowires (Ge@BCN NWs), designed to shield the Ge core from environmental factors while augmenting its electrical conductivity. Through microscopic and spectroscopic analyses, we confirmed the Ge core is completely encapsulated by a highly crystalline BCN shell. Electron transport measurements on the Ge@BCN NWs field-effect transistor (FET) revealed minimal hysteresis alongside heightened electrical conductivity, suggesting that the BCN shell acts as an efficacious protective barrier, curtailing the degradation of Ge NWs. Our approach presents a reliable method for bolstering the stability of nanomaterials and achieving functional 2D coated NWs.
ISSN
0272-8842
Language
eng
URI
https://dspace.ajou.ac.kr/dev/handle/2018.oak/33952
DOI
https://doi.org/10.1016/j.ceramint.2024.02.078
Fulltext

Type
Article
Funding
This work was supported by the National Research Foundation (NRF) of Korea (NRF-2021R1A2C2012649).
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