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Showing results 1 to 10 of 1245 (Search time: 0.0 seconds).

Positive Interaction between Charge Trapping and Polarization Switching in Metal-Interlayer-Ferroelectric-Interlayer-Silicon (MIFIS) Ferroelectric Field-Effect Transistor
  • Choi, Hyojun;
  • Kim, Giuk;
  • Lee, Sangho;
  • Shin, Hunbeom;
  • Lim, Youngjin;
  • Kim, Kang;
  • Kim, Do Hyung;
  • Oh, Il Kwon;
  • Park, Sang Hee Ko;
  • Ahn, Jinho;
  • Jeon, Sanghun
  • 2024-01-01
  • IEEE Electron Device Letters, Vol.45, pp.2351-2354
  • Institute of Electrical and Electronics Engineers Inc.
Optimizing De-Trap Pulses in Gate-Injection Type Ferroelectric NAND Cells to Minimize Read after Write Delay Issue
  • Kim, Giuk;
  • Choi, Hyojun;
  • Cho, Hongrae;
  • Lee, Sangho;
  • Shin, Hunbeom;
  • Kang, Hyunjun;
  • Kim, Hoon;
  • Shin, Seokjoong;
  • Park, Seonjae;
  • Kwon, Sunseong;
  • Lim, Youngjin;
  • Kim, Kang;
  • Min Chung, Jong;
  • Oh, Il Kwon;
  • Ko Park, Sang Hee;
  • Ahn, Jinho;
  • Jeon, Sanghun
  • 2024-01-01
  • IEEE Electron Device Letters, Vol.45, pp.2359-2362
  • Institute of Electrical and Electronics Engineers Inc.
Swelling-resistant graphene oxide membranes reinforced by heteroatomic inorganic dots for electrochemical lithium recovery from aqueous solution
  • 2024-12-21
  • Desalination, Vol.592
  • Elsevier B.V.
Experimental Analysis on the Interaction Between Interface Trap Charges and Polarization on the Memory Window of Metal-Ferroelectric-Insulator-Si (MFIS) FeFET
  • Kim, Giuk;
  • Choi, Hyojun;
  • Lee, Sangho;
  • Shin, Hunbeom;
  • Lee, Sangmok;
  • Nam, Yunseok;
  • Kang, Hyunjun;
  • Shin, Seokjoong;
  • Kim, Hoon;
  • Lim, Youngjin;
  • Kim, Kang;
  • Oh, Il Kwon;
  • Ko Park, Sang Hee;
  • Ahn, Jinho;
  • Jeon, Sanghun
  • 2024-01-01
  • IEEE Transactions on Electron Devices, Vol.71, pp.6627-6632
  • Institute of Electrical and Electronics Engineers Inc.
Impact of Work-Function Variation in Ferroelectric Field-Effect Transistoroa mark
  • 2024-01-01
  • IEEE Journal of the Electron Devices Society, Vol.12, pp.779-784
  • Institute of Electrical and Electronics Engineers Inc.
A comparative study of charge trapping effect in p-type MoTe2 and WSe2 FETs using pulsed current-voltage measurements
  • Yang, Jeong Yong;
  • Lee, Chan Ho;
  • Oh, Young Taek;
  • Ma, Jiyeon;
  • Heo, Junseok;
  • Yoo, Geonwook
  • 2021-01-01
  • Japanese Journal of Applied Physics, Vol.60
  • IOP Publishing Ltd
First Demonstration of Thermally Stable Zr:HfO2Ferroelectrics via Inserting AlN Interlayer
  • Lee, Sangmok;
  • Kim, Giuk;
  • Lee, Sangho;
  • Shin, Hunbeom;
  • Lim, Youngjin;
  • Kim, Kang;
  • Kim, Do Hyung;
  • Oh, Il Kwon;
  • Ko Park, Sang Hee;
  • Ahn, Jinho;
  • Jeon, Sanghun
  • 2024-01-01
  • IEEE Electron Device Letters, Vol.45, pp.1578-1581
  • Institute of Electrical and Electronics Engineers Inc.
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