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Showing results 1 to 10 of 1174 (Search time: 0.0 seconds).

Impact of Self-Heating Effect on DC and AC Performance of FD-SOI CMOS Inverteroa mark
  • 2025-01-01
  • IEEE Journal of the Electron Devices Society, Vol.13, pp.41-48
  • Institute of Electrical and Electronics Engineers Inc.
Improvement of Thermal Characteristics and On-Current in Vertically Stacked Nanosheet FET by Parasitic Channel Height Engineeringoa mark
  • 2024-01-01
  • IEEE Access, Vol.12, pp.105878-105886
  • Institute of Electrical and Electronics Engineers Inc.
Optimization of FinFET’s Fin Width and Height with Self-heating Effect
  • Lee, Gyeong Jae;
  • Kwon, Yoon Jun;
  • Song, Young Suh;
  • Kim, Hyunwoo;
  • Kim, Jang Hyun
  • 2024-08-01
  • Journal of Semiconductor Technology and Science, Vol.24, pp.365-372
  • Institute of Electronics Engineers of Korea
Epitaxial growth of NbN thin films for electrodes using atomic layer deposition
  • Young Jang, Seo;
  • Min Lee, Hye;
  • Young Sung, Ju;
  • Eun Kim, Se;
  • Deock Jeon, Jae;
  • Yun, Yewon;
  • Mo Moon, Sang;
  • Eun Yoo, Joung;
  • Hyeon Choi, Ji;
  • Joo Park, Tae;
  • Woon Lee, Sang
  • 2023-11-01
  • Applied Surface Science, Vol.636
  • Elsevier B.V.
Surface morphology transformation and densification behaviour of conventionally sintered AlFeCoNiSi high entropy alloysoa mark
  • Dewangan, Sheetal Kumar;
  • Nagarjuna, Cheenepalli;
  • Lee, Hansung;
  • Sharma, Ashutosh;
  • Ahn, Byungmin
  • 2023-01-01
  • Powder Metallurgy, Vol.66, pp.650-661
  • Taylor and Francis Ltd.
Understanding the role of Si alloying on the structural, mechanical, wear and high temperature oxidation behavior of CrFeNiTiX (X=Si) high entropy alloysoa mark
  • Nagarjuna, Cheenepalli;
  • Lee, Hansung;
  • Dewangan, Sheetal Kumar;
  • Rao, K. Raja;
  • Pillai, Gokul M.;
  • Kumar, Vinod;
  • Ahn, Byungmin
  • 2024-11-01
  • Journal of Materials Research and Technology, Vol.33, pp.5119-5135
  • Elsevier Editora Ltda
Comparative analysis of junctionless and inversion-mode nanosheet FETs for self-heating effect mitigation
  • 2024-01-01
  • Semiconductor Science and Technology, Vol.39
  • Institute of Physics
Highly qualified InP based QDs through a temperature controlled ZnSe shell coating process and their DFT calculationsoa mark
  • 2020-12-01
  • Nanoscale Advances, Vol.2, pp.5615-5622
  • Royal Society of Chemistry
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