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Showing results 1 to 10 of 149 (Search time: 0.0 seconds).

Thru-Hole Epitaxy: A Highway for Controllable and Transferable Epitaxial Growthoa mark
  • Jang, Dongsoo;
  • Ahn, Chulwoo;
  • Lee, Youngjun;
  • Lee, Seungjun;
  • Lee, Hyunkyu;
  • Kim, Donghoi;
  • Kim, Yongsun;
  • Park, Ji Yong;
  • Kwon, Young Kyun;
  • Choi, Jaewu;
  • Kim, Chinkyo
  • 2023-02-03
  • Advanced Materials Interfaces, Vol.10
  • John Wiley and Sons Inc
Low-Temperature Direct Growth of Amorphous Boron Nitride Films for High-Performance Nanoelectronic Device Applicationsoa mark
  • Sattari-Esfahlan, Seyed Mehdi;
  • Kim, Hyoung Gyun;
  • Hyun, Sang Hwa;
  • Choi, Jun Hui;
  • Hwang, Hyun Sik;
  • Kim, Eui Tae;
  • Park, Hyeong Gi;
  • Lee, Jae Hyun
  • 2023-02-08
  • ACS Applied Materials and Interfaces, Vol.15, pp.7274-7281
  • American Chemical Society
전압 제어에 의한 질화붕소-그래핀 이종구조 양자광원
  • 유미향
  • 2020-08
  • The Graduate School, Ajou University
제일원리 계산이론을 통한 육각형 질화붕소 양자광원에 대한 곡률 효과
  • 임동규
  • 2021-08
  • The Graduate School, Ajou University
육방정계 질화 붕소 (h-BN) 원자 결함으로부터 방출된 단일 광자의 Stark shift 연구
  • 노기창
  • 2019-08
  • The Graduate School, Ajou University
Multilevel Nonvolatile Memory by CMOS-Compatible and Transfer-free Amorphous Boron Nitride Filmoa mark
  • Sattari-Esfahlan, Seyed Mehdi;
  • Hyun, Sang Hwa;
  • Moon, Ji Yun;
  • Heo, Keun;
  • Lee, Jae Hyun
  • 2024-11-26
  • ACS Applied Electronic Materials, Vol.6, pp.7781-7790
  • American Chemical Society
Modeling and Simulation Study of Reduced Self-Heating in Bottom-Gate β-Ga2O3 MISFETs with a h-BN Gate Insulator
  • 2019-06-01
  • Journal of the Korean Physical Society, Vol.74, pp.1171-1175
  • The Korean Physical Society
Self-Aligned Edge Contact Process for Fabricating High-Performance Transition-Metal Dichalcogenide Field-Effect Transistors
  • 2024-09-10
  • ACS Nano, Vol.18, pp.25009-25017
  • American Chemical Society
Controlled growth of highly stable and conducting Ge core/ BCN shell nanowire
  • Choi, Jun Hui;
  • Moon, Ji Yun;
  • Lee, Jae Hyun
  • 2024-05-01
  • Ceramics International, Vol.50, pp.15994-15999
  • Elsevier Ltd
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