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Showing results 1 to 10 of 5393 (Search time: 0.0 seconds).

Asymmetric Double-Gate β-Ga2O3 Nanomembrane Field-Effect Transistor for Energy-Efficient Power Devices
  • Ma, Jiyeon;
  • Cho, Hyung Jun;
  • Heo, Junseok;
  • Kim, Sunkook;
  • Yoo, Geonwook
  • 2019-06-01
  • Advanced Electronic Materials, Vol.5
  • Blackwell Publishing Ltd
Impact of Work-Function Variation in Ferroelectric Field-Effect Transistoroa mark
  • 2024-01-01
  • IEEE Journal of the Electron Devices Society, Vol.12, pp.779-784
  • Institute of Electrical and Electronics Engineers Inc.
Investigating versatile capabilities of organic field-effect transistors incorporated with vacuum-deposited metal nanoparticles
  • Kim, Ji Hwan;
  • Jo, Il Young;
  • Baek, Seokhyeon;
  • Cho, Hong Rae;
  • Park, Sungjun;
  • Lee, Jongwon;
  • Kim, Chang Hyun;
  • Yoon, Myung Han
  • 2024-04-08
  • Journal of Materials Chemistry C, Vol.12, pp.5941-5950
  • Royal Society of Chemistry
Optimization of Dual-workfunction Line Tunnel Field-effect Transistor with Island Source Junction
  • Yun, Chaewon;
  • Kim, Sangwan;
  • Cho, Seongjae;
  • Cho, Il Hwan;
  • Kim, Hyunwoo;
  • Kim, Jang Hyun;
  • Kim, Garam
  • 2023-08-01
  • Journal of Semiconductor Technology and Science, Vol.23, pp.207-214
  • Institute of Electronics Engineers of Korea
Ternary Logic Transistors Using Multi-Stacked 2D Electron Gas Channels in Ultrathin Oxide Heterostructuresoa mark
  • Choi, Ji Hyeon;
  • Seok, Tae Jun;
  • Kim, Sang June;
  • Dae, Kyun Seong;
  • Jang, Jae Hyuck;
  • Cho, Deok Yong;
  • Lee, Sang Woon;
  • Park, Tae Joo
  • 2025-02-10
  • Advanced Science, Vol.12
  • John Wiley and Sons Inc
Improvement of Thermal Characteristics and On-Current in Vertically Stacked Nanosheet FET by Parasitic Channel Height Engineeringoa mark
  • 2024-01-01
  • IEEE Access, Vol.12, pp.105878-105886
  • Institute of Electrical and Electronics Engineers Inc.
Demonstration of a Frequency Doubler Using a Tunnel Field-Effect Transistor with Dual Pocket Dopingoa mark
  • 2023-12-01
  • Electronics (Switzerland), Vol.12
  • Multidisciplinary Digital Publishing Institute (MDPI)
Effects of Material and Doping Profile Engineering of Source Junction on Line Tunneling FET Operations
  • 2023-08-01
  • Journal of Semiconductor Technology and Science, Vol.23, pp.228-235
  • Institute of Electronics Engineers of Korea
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