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Classical and Quantum Experiments Using Hybrid Si3N-LiNbO Photonic Chip
  • Heo, Hyungjun ;
  • Kwon, Kiwon ;
  • Lee, Donghwa ;
  • Jang, Hyeong Soon ;
  • Kim, Sangin ;
  • Shin, Heedeuk ;
  • Kim, Yong Su ;
  • Han, Sang Wook ;
  • Jung, Hojoong
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Publication Year
2025-01-01
Journal
IEEE Photonics Technology Letters
Publisher
Institute of Electrical and Electronics Engineers Inc.
Citation
IEEE Photonics Technology Letters, Vol.37 No.3, pp.173-176
Keyword
Directional couplerintegrated opticslithium niobateMach-Zehnder interferometerquantum opticssilicon nitride
Mesh Keyword
LiNbO 3Lithium niobateMach-ZehnderOptical-Photonic chipsPhotonic circuitsQuantum interferenceQuantum photonicsStrip-loaded waveguidesZehnder interferometers
All Science Classification Codes (ASJC)
Electronic, Optical and Magnetic MaterialsAtomic and Molecular Physics, and OpticsElectrical and Electronic Engineering
Abstract
We fabricated various optical devices on a hybrid Si3N4-LiNbO3 platform for integrated quantum photonic circuits and observed Hong-Ou-Mandel (HOM) quantum interference. Strip-loaded waveguides were prepared via Si3N4 deposition on LiNbO3. Consequently, fundamental building blocks for quantum photonics, such as ring resonators, various beam splitters, and Mach-Zehnder interferometers, were fabricated and tested. Using 50:50 beam splitters, we observed HOM quantum interference and achieved a visibility of 96.6 ± 1.2% after the subtraction of accidental counts. More advanced quantum-integrated devices are expected to be realized using the proposed hybrid platform.
ISSN
1941-0174
Language
eng
URI
https://aurora.ajou.ac.kr/handle/2018.oak/38440
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85215757957&origin=inward
DOI
https://doi.org/10.1109/lpt.2024.3525396
Journal URL
https://ieeexplore.ieee.org/servlet/opac?punumber=68
Type
Article
Funding
This work was supported in part by the National Research Foundation of Korea (NRF) under Grant 2022M3K4A1097119 and Grant 2023M3K5A1094805; in part by the Institute for Information and Communications Technology Promotion (IITP) under Grant 2020-0-00947, Grant 2020-0-00890, and Grant RS-2023-00222863; in part by the National Research Council of Science and Technology (NST) under Grant CAP21034-000; and in part by the Korea Institute of Science and Technology (KIST) Research Program under Grant 2E32941 and Grant 2E32971.
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Kim, Sangin김상인
Department of Intelligence Semiconductor Engineering
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