This study explores the enhancement of electrostatic chuck (ESC) performance through the modulation of the ZrO₂/Al₂O₃ ratio, with additional doping of Y₂O₃ and SiO₂, deposited via Atmospheric Plasma Spraying (APS). Three different ZrO₂/Al₂O₃ mixed powders, further doped with Y₂O₃ and SiO₂, were prepared and analyzed for their electrical and mechanical properties. By utilizing APS to deposit these coatings, we achieved uniform and crack-free layers with controlled thickness and consistent mechanical properties. Notably, the mixed powder with the highest ZrO₂ content achieved a relative dielectric constant of about 22 with a volume resistivity of ∼1.0 × 101⁴ Ωcm. The enhanced dielectric constant and reduced resistivity induced the Johnsen-Rahbek (J-R) effect, leading to an improved clamping force 25 gf/cm2 on glass substrate, exceeding the industrial requirement of 10∼15 gf/cm2. Additionally, this ZrO₂/Al₂O₃ composition demonstrated a breakdown voltage of approximately 4200 V and a dielectric strength of about 17 V/μm, showcasing better voltage stability compared to traditional TiO₂-doped Al₂O₃. The high breakdown strength and excellent adhesion force suggest that ZrO₂-Al₂O₃ coatings, along with Y₂O₃ and SiO₂ doping, offer superior performance and reliability, making them viable alternatives to traditional TiO₂-doped Al₂O₃ chucks in advanced semiconductor manufacturing applications.
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry Education (grant number NRF-2022R1I1A1A01053522).
