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Fully Integrated SiGe HBT BiCMOS Transmit-Receive Front-End IC for 5G mmW Radio with A Reconfigurable Built-In Diode RF Switch
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Publication Year
2024-01-01
Journal
Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium
Publisher
Institute of Electrical and Electronics Engineers Inc.
Citation
Digest of Papers - IEEE Radio Frequency Integrated Circuits Symposium, pp.71-74
Keyword
BalunBiCMOSfifth-generation (5G)front-end (FE)HBTmillimeter-wave (mmW)power amplifier (PA)SiGe
Mesh Keyword
BalunBiCMOSFifth-generation (5g)Front endFront-endHBT BiCMOSMillimeter-waveMillimeter-wave radioPower amplifierSiGe HBTs
All Science Classification Codes (ASJC)
Engineering (all)
Abstract
This work presents a novel SiGe HBT BiCMOS TRX front-end for 5G mmW radio. A built-in base-to-collector diode (DBC) of a CB HBT in a cascode, with a coupled line impedance inverting balun, is reconfigured to reverse- or forward-biased to act as a PA or an RF switch in TX and RX modes, respectively. This architecture enables to remove any lossy switch in TX path, which leads to improvement in Pout, PAE, and NF simultaneously. It attains peak Pout of 22.0 dBm, 36.5% PAE, and the minimum NF of 3.08 dB at 28 GHz. It also supports linear amplification of 400 MHz 64 QAM 5G NR FR2 CP signal.
ISSN
1529-2517
Language
eng
URI
https://aurora.ajou.ac.kr/handle/2018.oak/37145
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85200205595&origin=inward
DOI
https://doi.org/10.1109/rfic61187.2024.10600052
Type
Conference
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Ju, Inchan Image
Ju, Inchan주인찬
Department of Electrical and Computer Engineering
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