Solution-processed copper oxide (CuxO) semiconductors have gained significant interest in recent years due to their p-Type conductivity, transparency, nontoxicity, and low cost. However, the development of CuxO thin film transistors (TFTs) has been limited by their low field-effect mobility and poor reproducibility. In this study, we present a simple solution doping process for producing high-performance sol-gel-based CuO TFTs under ambient conditions. By doping the precursor solution with an alkali metal, we achieved a more than 10-fold increase in device mobility compared to pristine CuO transistors annealed at the same temperature. These results suggest the possibility of implementing solution processed p-Type oxide transistors at lower temperatures, thereby enabling CuO TFTs to be realized on flexible plastic substrates.
ACKNOWLEDGMENT This work was supported by the Korea Electric Power Corporation (Grant No. R21XO01-20). This work was also supported by the Technology Innovation Program (or Industrial Strategic Technology Development Program-Alchemist Project) (1415180859, Chiral perovskite LED smart contact lens based hyper vision metaverse) funded by the Ministry of Trade, Industry & Energy(MOTIE, Korea) and Korea Evaluation Institute of Industrial Technology(KEIT, Korea).