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Broadband photodetection of MoS2/p-Ge/n-Ge bipolar heterojunction phototransistor
  • Park, Youngseo ;
  • Hwang, Au Jin ;
  • Lee, Chanho ;
  • Yoo, Geonwook ;
  • Heo, Junseok
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Publication Year
2021-05-01
Journal
2021 Conference on Lasers and Electro-Optics, CLEO 2021 - Proceedings
Publisher
Institute of Electrical and Electronics Engineers Inc.
Citation
2021 Conference on Lasers and Electro-Optics, CLEO 2021 - Proceedings
Mesh Keyword
1550 nmHeterojunction phototransistorsPhoto detectionPhotocurrent amplificationResponsivity
All Science Classification Codes (ASJC)
Computer Networks and CommunicationsElectrical and Electronic EngineeringElectronic, Optical and Magnetic MaterialsInstrumentationAtomic and Molecular Physics, and Optics
Abstract
MoS2/p-Ge/n-Ge bipolar heterojunction phototransistor is fabricated, which can detect from VIS to NIR. The responsivities are 35.21 and 133.56 A/W at 466 and 1550 nm, respectively. Photocurrent amplification of BHP, 6 times larger than photocurrent of p-Ge/n-Ge and p-Ge/MoS2 photodiodes.
Language
eng
URI
https://aurora.ajou.ac.kr/handle/2018.oak/36655
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85120506622&origin=inward
Journal URL
http://ieeexplore.ieee.org/xpl/mostRecentIssue.jsp?punumber=9571071
Type
Conference
Funding
This work was supported by the Industrial Strategic Technology Development Program (20000300), funded by the Ministry ofTrade, Industry, and Energy(MOTIE, Republic ofKorea).
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