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C-HYFLUR: Recovery for power-off failure in flash memory storage systems using compression scheme for hybrid flush recovery
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dc.contributor.authorChung, Ji Hwan-
dc.contributor.authorKim, Sungsoo-
dc.contributor.authorChung, Tae Sun-
dc.date.issued2018-01-01-
dc.identifier.urihttps://aurora.ajou.ac.kr/handle/2018.oak/36246-
dc.identifier.urihttps://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85022187176&origin=inward-
dc.description.abstractFlash memory has a variety of advantages such as the better performance compare to hard disk, shock resistance, small size, and so on. Therefore the use ratio of flash memory is being increased. But if the power-off failure is occurred, flash memory storage systems may loss mapping information. So in this paper, we propose power-off recovery scheme, called C-HYFLUR. We have applied C-HYFLUR to page mapping FTL and implemented on a platform board, and compared with the existing recovery schemes through several evaluations. Compare to existing recovery schemes, the overhead of C-HYFLUR is very low.-
dc.description.sponsorshipThis research was supported by the MISP (Ministry of Science, ICT & Future Planning), Korea, under the National Program for Excellence in SW supervised by the IITP (Institute for Information & communications Technology Promotion) (2015-0-00908)-
dc.language.isoeng-
dc.publisherSpringer Verlag-
dc.subject.meshCompression scheme-
dc.subject.meshFailure recovery-
dc.subject.meshFlash memory storage systems-
dc.subject.meshMapping information-
dc.subject.meshPage mappings-
dc.subject.meshPower off recovery-
dc.subject.meshRecovery scheme-
dc.subject.meshShock resistance-
dc.titleC-HYFLUR: Recovery for power-off failure in flash memory storage systems using compression scheme for hybrid flush recovery-
dc.typeConference-
dc.citation.conferenceDate2017.6.26. ~ 2017.6.29.-
dc.citation.conferenceName4th iCatse Conference on Mobile and Wireless Technology, ICMWT 2017-
dc.citation.editionMobile and Wireless Technologies 2017 - ICMWT 2017-
dc.citation.endPage294-
dc.citation.startPage284-
dc.citation.titleLecture Notes in Electrical Engineering-
dc.citation.volume425-
dc.identifier.bibliographicCitationLecture Notes in Electrical Engineering, Vol.425, pp.284-294-
dc.identifier.doi10.1007/978-981-10-5281-1_32-
dc.identifier.scopusid2-s2.0-85022187176-
dc.identifier.urlhttp://www.springer.com/series/7818-
dc.subject.keywordCompression-
dc.subject.keywordFlash memory-
dc.subject.keywordFTL-
dc.subject.keywordPower-off failure recovery-
dc.type.otherConference Paper-
dc.description.isoafalse-
dc.subject.subareaIndustrial and Manufacturing Engineering-
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Kim, Sungsoo김성수
Department of Software and Computer Engineering
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