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Conversion of 1D Nb2Se9 Nanowires to 2D Conductive NbSe2 via Hydrogen Annealing: Structural and Electrical Characterization
  • Lee, Sang Hoon ;
  • Lee, Bom ;
  • Cho, Sooheon ;
  • Kim, Dahoon ;
  • Gudena, Gutema Teshome ;
  • Kim, Ji Hee ;
  • Yu, Hak Ki ;
  • Choi, Jae Young
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Publication Year
2024-09-04
Journal
Crystal Growth and Design
Publisher
American Chemical Society
Citation
Crystal Growth and Design, Vol.24 No.17, pp.7160-7165
Mesh Keyword
Electrical characterizationHydrogen annealingMultiple layersOne-dimensionalOptical and mechanical propertiesP type semiconductorStructural characterizationTunablesVan der WaalVan der waals' forces
All Science Classification Codes (ASJC)
Chemistry (all)Materials Science (all)Condensed Matter Physics
Abstract
Van der Waals (vdW) materials, consisting of multiple layers held together by weak vdW forces, have garnered significant interest due to their tunable electronic, optical, and mechanical properties. In this study, a one-dimensional (1D) Nb2Se9 nanowire template, known for its p-type semiconductor characteristics, was synthesized and converted into a conductive NbSe2 nanowire through hydrogen annealing. The conversion process, performed at 300 and 500 °C, maintained the wire morphology and passed through an intermediate NbSe3 phase. Structural analysis confirmed the conversion, showing preferred orientation growth in the vdWs direction [002]. Raman and X-ray diffraction results indicated that residual Se in the material increased interlayer distances and caused stress in the out-of-plane direction. Electrical measurements demonstrated that the converted NbSe2 exhibited metallic properties with linear I-V curves and ohmic contact. The NbSe2 nanowires converted at 300 °C exhibited superior performance, with a breakdown current density of 2.01 MA cm-2, surpassing conventional nano metallic wire materials like Si, Cu, and SnO2. This study highlights the potential of NbSe2 nanowires for applications in nano devices, leveraging their high electrical conductivity and structural integrity maintained at low process temperatures suitable for back-end-of-line (BEOL) processes.
ISSN
1528-7505
Language
eng
URI
https://aurora.ajou.ac.kr/handle/2018.oak/34394
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85201514702&origin=inward
DOI
https://doi.org/10.1021/acs.cgd.4c00787
Journal URL
http://pubs.acs.org/journal/cgdefu
Type
Article
Funding
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Korean government (MSIT; RS-2023 00208311).
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Yu, Hak Ki류학기
Department of Materials Science Engineering
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