SbSI and SbSeI materials, which are one-dimensional materials based on van der Waals bonds, have the same crystal structure and physical property changes because of their differences in lattice constants. Therefore, controlling the band structure of these materials in accordance with the mixing ratio of S and Se is important. In this study, SbSI, SbSeI, and alloys with intermediate compositions were synthesized, and their crystal and band structures were analyzed. Results showed a lattice strain proportional to the composition of the S-Se mixture, which was synthesized as a stable phase without phase separation. As S was substituted with Se, the band gap decreased. These results could be utilized in various fields of optoelectronic devices where Sb (S or Se) I series is primarily applied.
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Korean government and Ministry of Science and ICT (MSIT; RS-2023-00208311, RS-2023-00256847) and the Technology Innovation Program (20024822, Development of low dielectric constant hybrid substrate for 6G terahertz communication) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea). Also, this work was supported by the KIST Institutional Program (Project No. 2E31854-22-066).
