Ajou University repository

Demonstration of a Frequency Doubler Using a Tunnel Field-Effect Transistor with Dual Pocket Dopingoa mark
Citations

SCOPUS

0

Citation Export

Publication Year
2023-12-01
Journal
Electronics (Switzerland)
Publisher
Multidisciplinary Digital Publishing Institute (MDPI)
Citation
Electronics (Switzerland), Vol.12 No.24
Keyword
ambipolar currentband-to-band tunnelingfrequency doublerpocket doping techniquetunnel field-effect transistor
All Science Classification Codes (ASJC)
Control and Systems EngineeringSignal ProcessingHardware and ArchitectureComputer Networks and CommunicationsElectrical and Electronic Engineering
Abstract
In this study, a frequency doubler that consists of a tunnel field-effect transistor (TFET) with dual pocket doping is proposed, and its operation is verified using technology computer-aided design (TCAD) simulations. The frequency-doubling operation is important to having symmetrical current characteristics, which eliminate odd harmonics and the need for extra filter circuitry. The proposed TFET has intrinsically bidirectional and controllable currents that can be implemented by pocket doping, which is located at the junction between the source/drain (S/D) and the channel region, to modify tunneling probabilities. The source-to-channel (ISC) and channel-to-drain currents (ICD) can be independently changed by managing each pocket doping concentration on the source and drain sides (NS,POC and ND,POC). After that, the current matching process was investigated through NS,POC and ND,POC splits, respectively. However, it was found that the optimized doping condition achieved at the device level (namely, a transistor evaluation) is not suitable for a frequency doubler operation because the voltage drop generated by a load resistor in the frequency doubler circuit configuration causes the currents to be unbalanced between ISC and ICD. Therefore, after symmetrical current matching was performed by optimizing NS,POC and ND,POC at the circuit level, it was clearly seen that the output frequency was doubled in comparison to the input sinusoidal signal. In addition, the effects of the S/D and pocket doping variations that can occur during process integration were investigated to determine how much frequency multiplications are affected, and these variations have the immunity of S/D doping and pocket doping length changes. Furthermore, the impact of device scaling with gate length (LG) variations was evaluated. Based on these findings, the proposed frequency doubler is anticipated to offer benefits for circuit design and low-power applications compared to the conventional one.
ISSN
2079-9292
Language
eng
URI
https://aurora.ajou.ac.kr/handle/2018.oak/33854
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85180183743&origin=inward
DOI
https://doi.org/2-s2.0-85180183743
Journal URL
www.mdpi.com/journal/electronics
Type
Article
Funding
This work was supported by the National Research Foundation of Korea (NRF) Grant funded by the Korea Government (MSIT) under Grant 2022R1G1A1009114. The EDA tool was supported by the IC Design Education Center (IDEC), Republic of Korea.
Show full item record

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

Related Researcher

Kim, Jang Hyun Image
Kim, Jang Hyun김장현
Department of Electrical and Computer Engineering
Read More

Total Views & Downloads

File Download