One-dimensional (1D) transition-metal chalcogenides (TMCs) are attracting increasing scientific and technological interest, especially for ultrasmall electronic interconnects and highly active catalysts. However, it is quite challenging to synthesize high-quality 1D TMCs over large areas on substrates. Here, we report on an atmospheric-pressure vapor-phase synthetic strategy for growing ultrathin 1D Mo6Te6 wires on various substrates such as Si3N4, SiO2, and doped SiC, employing double MoO3 sources. Scanning transmission electron microscopy confirms that the ultrathin 1D Mo6Te6 wires possessing thicknesses of 3−5 nm grow laterally to form wire networks. Lattice-resolution electron energy loss spectroscopy mapping clearly shows intensity variations of Mo-M4,5 and Te-M4,5 signals originating from Mo and Te atoms in the monoclinic Mo6Te6 structure. Furthermore, we investigate the vibrational modes of 1D Mo6Te6 wire networks, confirming that the two characteristic Raman peaks at 155 and 245 cm−1 are associated with resonance Raman scattering. The 1D Mo6Te6 wire networks not only possess excellent transparency in the near-infrared range but also are electrically conductive. They also exhibit temperature-dependent Hall effects. We believe that these ultrathin 1D Mo6Te6 wires are auspicious materials for future electronics and catalysis.
We acknowledge the donors of the American Chemical Society Petroleum Research Fund (55709-DNI5) for funding and support of this research. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIT) (nos. 2019R1C1C1008070 and 2018R1C1B5044670). S.J.K. and R.M. were supported by the Defense Threat Reduction Agency Basic Research through award no. HDTRA1-14-1-0042 and partially by the National Science Foundation (NSF) through the University of Minnesota MRSEC under award no. DMR-2011401. Portions of this work were conducted in the Minnesota Nano Center, which is supported by the NSF through the National Nanotechnology Coordinated Infrastructure, award no. ECCS-2025124.