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to 10 of 3872 (Search time: 0.0 seconds).
Asymmetric Double-Gate β-Ga2O3 Nanomembrane Field-Effect Transistor for Energy-Efficient Power Devices
Ma, Jiyeon;
Cho, Hyung Jun;
Heo, Junseok
;
Kim, Sunkook;
Yoo, Geonwook
2019-06-01
Advanced Electronic Materials, Vol.5
Blackwell Publishing Ltd
Aqueous electrolyte-gated solution-processed metal oxide transistors for direct cellular interfaces
oa mark
Kang, Dong Hee;
Choi, Jun Gyu;
Lee, Won June;
Heo, Dongmi;
Wang, Sungrok;
Park, Sungjun
;
Yoon, Myung Han
2023-06-01
APL Bioengineering, Vol.7
American Institute of Physics Inc.
Demonstration of a Frequency Doubler Using a Tunnel Field-Effect Transistor with Dual Pocket Doping
oa mark
Kim, Jang Hyun
;
Kim, Hyunwoo
2023-12-01
Electronics (Switzerland), Vol.12
Multidisciplinary Digital Publishing Institute (MDPI)
Ultra-large dynamic range synaptic indium gallium zinc oxide transistors
oa mark
Kwak, Taehyun;
Kim, Myung Jin;
Lee, Won June;
Kim, Eun Chae;
Jang, Jingon;
Wang, Gunuk;
Kim, Tae Wook;
Kim, Yong Seok;
Park, Sungjun
2022-12-01
Applied Materials Today, Vol.29
Elsevier Ltd
Low-Temperature Direct Growth of Amorphous Boron Nitride Films for High-Performance Nanoelectronic Device Applications
oa mark
Sattari-Esfahlan, Seyed Mehdi;
Kim, Hyoung Gyun;
Hyun, Sang Hwa;
Choi, Jun Hui;
Hwang, Hyun Sik;
Kim, Eui Tae;
Park, Hyeong Gi;
Lee, Jae Hyun
2023-02-08
ACS Applied Materials and Interfaces, Vol.15, pp.7274-7281
American Chemical Society
Multivalued logic devices via directly patterned sol-gel metal oxide materials
김원식
2023-08
The Graduate School, Ajou University
High-Current-Density Organic Electrochemical Diodes Enabled by Asymmetric Active Layer Design
oa mark
Kim, Youngseok;
Kim, Gunwoo;
Ding, Bowen;
Jeong, Dahyun;
Lee, Inho;
Park, Sungjun
;
Kim, Bumjoon J.;
McCulloch, Iain;
Heeney, Martin;
Yoon, Myung Han
2022-02-01
Advanced Materials, Vol.34
John Wiley and Sons Inc
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