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Showing results 1 to 10 of 2349 (Search time: 0.0 seconds).

Investigation of ferro-resistive switching mechanisms in TiN/Hf0.5Zr0.5O2/WOx/W ferroelectric tunnel junctions with the interface layer effect
  • Lee, Suk Hyun;
  • Park, Han Sol;
  • Shin, Seong Jae;
  • Lee, In Soo;
  • Ryoo, Seung Kyu;
  • Byun, Seungyong;
  • Kim, Kyung Do;
  • Moon, Taehwan;
  • Hwang, Cheol Seong
  • 2024-12-01
  • Applied Physics Reviews, Vol.11
  • American Institute of Physics
A Molecular-Switch-Embedded Organic Photodiode for Capturing Images against Strong Backlight
  • Kang, Mingyun;
  • Hassan, Syed Zahid;
  • Ko, Seong Min;
  • Choi, Changwon;
  • Kim, Juhee;
  • Parumala, Santosh K.R.;
  • Kim, Yun Hi;
  • Jang, Yun Hee;
  • Yoon, Jinhwan;
  • Jee, Dong Woo;
  • Chung, Dae Sung
  • 2022-04-01
  • Advanced Materials, Vol.34
  • John Wiley and Sons Inc
Highly uniform resistive switching characteristics of Ti/TaOx/ITO memristor devices for neuromorphic system
  • 2023-10-25
  • Journal of Alloys and Compounds, Vol.961
  • Elsevier Ltd
Electric Field-Induced Area Scalability toward the Multilevel Resistive Switching
  • 2021-09-01
  • Advanced Materials Interfaces, Vol.8
  • John Wiley and Sons Inc
Time-delayed stochastic volatility model
  • 2022-02-01
  • Physica D: Nonlinear Phenomena, Vol.430
  • Elsevier B.V.
White light modulated forming-free multilevel resistive switching in ZnO:Cu films
  • Saini, Mahesh;
  • Kumar, Mohit;
  • Mandal, Rupam;
  • Mitra, Anirban;
  • Som, Tapobrata
  • 2021-10-15
  • Applied Surface Science, Vol.563
  • Elsevier B.V.
Leveraging volatile memristors in neuromorphic computing: from materials to system implementation
  • Moon, Taehwan;
  • Soh, Keunho;
  • Kim, Jong Sung;
  • Kim, Ji Eun;
  • Chun, Suk Yeop;
  • Cho, Kyungjune;
  • Yang, J. Joshua;
  • Yoon, Jung Ho
  • 2024-08-20
  • Materials Horizons, Vol.11, pp.4840-4866
  • Royal Society of Chemistry
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