Ovonic threshold switch (OTS) has been considered for use as a selector in 3-dimensional (3D) cross-point memories. Arsenic-containing materials such as the Ge-As-Si-Te-N system have been proposed for the switching of OTS devices. However, as is toxic to both humans and the environment, such materials are generally avoided. Here, high-performance OTS devices are demonstrated using As-free material, i.e., a Ga-N-Sb-Te layer, which exhibits promising threshold switching characteristics. The Ga-N-Sb-Te thin film was deposited by co-sputtering process at 298 K. The OTS device based on the Ga-N-Sb-Te material exhibited a large ON current density (>10 MA/cm2) with long cycling endurance (>107), thus can be considered a promising candidate for use as a selector for 3D cross-point memories.
This work was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science and ICT (NRF- 2019R1C1C1008577 , 2020R1A4A1018935 ). This work was supported by the Technology Innovation Program (No. 20003555 ) funded by the Ministry of Trade, Industry & Energy ( MOTIE , Korea). This work was also supported by the GRRC program of Gyeonggi province ( GRRC AJOU 2016B03 , Photonics-Medical Convergence Technology Research Center).
