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Showing results 1 to 10 of 2528 (Search time: 0.0 seconds).

Surface Passivation of Layered MoSe2 via van der Waals Stacking of Amorphous Hydrocarbon
  • Lee, Do Hyeon;
  • Dongquoc, Viet;
  • Hong, Seongin;
  • Kim, Seung Il;
  • Kim, Eunjeong;
  • Cho, Su yeon;
  • Oh, Chang Hwan;
  • Je, Yeonjin;
  • Kwon, Mi Ji;
  • Hoang Vo, Anh;
  • Seo, Dong Bum;
  • Lee, Jae Hyun;
  • Kim, Sunkook;
  • Kim, Eui Tae;
  • Park, Jun Hong
  • 2022-10-01
  • Small, Vol.18
  • John Wiley and Sons Inc
Motivational affordances and survival of new askers on social Q&A sites: The case of Stack Exchange network
  • 2022-01-01
  • Journal of the Association for Information Science and Technology, Vol.73, pp.90-103
  • John Wiley and Sons Inc
Gamification effects on users' motivation to contribute knowledge in a Portuguese Q&A community
  • 2021-01-01
  • Aslib Journal of Information Management, Vol.73, pp.578-599
  • Emerald Group Holdings Ltd.
Work-Function Variation and Delay Analysis in NAND and NOR Circuits using Gate Insulator Stack-based Dopingless Tunnel Field-effect Transistors
  • 2024-12-01
  • Journal of Semiconductor Technology and Science, Vol.24, pp.557-564
  • Institute of Electronics Engineers of Korea
Graded crystalline HfO gate dielectric layer for high-k/Ge MOS gate stackoa mark
  • 2021-01-01
  • IEEE Journal of the Electron Devices Society, Vol.9, pp.295-299
  • Institute of Electrical and Electronics Engineers Inc.
Polytypism in few-layer gallium selenideoa mark
  • Lim, Soo Yeon;
  • Lee, Jae Ung;
  • Kim, Jung Hwa;
  • Liang, Liangbo;
  • Kong, Xiangru;
  • Nguyen, Thi Thanh Huong;
  • Lee, Zonghoon;
  • Cho, Sunglae;
  • Cheong, Hyeonsik
  • 2020-04-21
  • Nanoscale, Vol.12, pp.8563-8573
  • Royal Society of Chemistry
Mesoscopic Stacking Reconfigurations in Stacked van der Waals Filmoa mark
  • 2024-05-23
  • Small, Vol.20
  • John Wiley and Sons Inc
Improvement of Thermal Characteristics and On-Current in Vertically Stacked Nanosheet FET by Parasitic Channel Height Engineeringoa mark
  • 2024-01-01
  • IEEE Access, Vol.12, pp.105878-105886
  • Institute of Electrical and Electronics Engineers Inc.
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