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Showing results 1 to 10 of 1861 (Search time: 0.0 seconds).

Multilevel Nonvolatile Memory by CMOS-Compatible and Transfer-free Amorphous Boron Nitride Filmoa mark
  • Sattari-Esfahlan, Seyed Mehdi;
  • Hyun, Sang Hwa;
  • Moon, Ji Yun;
  • Heo, Keun;
  • Lee, Jae Hyun
  • 2024-11-26
  • ACS Applied Electronic Materials, Vol.6, pp.7781-7790
  • American Chemical Society
Effect of geometry of underground structure and electrode on electrical resistance measurement: A numerical study
  • Kim, Tae Young;
  • Ryu, Hee Hwan;
  • Kang, Meiyan;
  • Choi, Suyoung;
  • Chong, Song Hun
  • 2024-10-10
  • Geomechanics and Engineering, Vol.39, pp.105-113
  • Techno-Press
Highly uniform resistive switching characteristics of Ti/TaOx/ITO memristor devices for neuromorphic system
  • 2023-10-25
  • Journal of Alloys and Compounds, Vol.961
  • Elsevier Ltd
Variance-aware weight quantization of multi-level resistive switching devices based on Pt/LaAlO3/SrTiO3 heterostructuresoa mark
  • 2022-12-01
  • Scientific Reports, Vol.12
  • Nature Research
The migration of alkali metal (Na + , Li + , and K + ) ions in single crystalline vanadate nanowires: Rasch-Hinrichsen resistivity
  • Lee, Yejung;
  • Ye, Byeong Uk;
  • Lee, Dong Kyu;
  • Baik, Jeong Min;
  • Yu, Hak Ki;
  • Kim, Myung Hwa
  • 2019-04-01
  • Current Applied Physics, Vol.19, pp.516-520
  • Elsevier B.V.
Area-Selective Atomic Layer Deposition for Resistive Random-Access Memory Devices
  • Oh, Il Kwon;
  • Khan, Asir Intisar;
  • Qin, Shengjun;
  • Lee, Yujin;
  • Wong, H. S.Philip;
  • Pop, Eric;
  • Bent, Stacey F.
  • 2023-09-13
  • ACS Applied Materials and Interfaces, Vol.15, pp.43087-43093
  • American Chemical Society
In Situ Observation of Two-Dimensional Electron Gas Creation at the Interface of an Atomic Layer-Deposited Al2O3/TiO2Thin-Film Heterostructureoa mark
  • Seok, Tae Jun;
  • Liu, Yuhang;
  • Choi, Ji Hyeon;
  • Kim, Hye Ju;
  • Kim, Dae Hyun;
  • Kim, Sung Min;
  • Jang, Jae Hyuck;
  • Cho, Deok Yong;
  • Lee, Sang Woon;
  • Park, Tae Joo
  • 2020-09-22
  • Chemistry of Materials, Vol.32, pp.7662-7669
  • American Chemical Society
Vanadium oxide thin film deposited on Si by atomic layer deposition for non-volatile resistive switching memory devices
  • 2023-12-01
  • Applied Surface Science, Vol.639
  • Elsevier B.V.
Evaluation of initial prestress state in PS strand using the deformation characteristics of multi-strand anchor headoa mark
  • 2018-02-01
  • KSCE Journal of Civil Engineering, Vol.22, pp.647-656
  • Springer Verlag
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