Ajou University repository

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Showing results 1 to 10 of 410 (Search time: 0.0 seconds).

Plasma atomic layer etching of molybdenum with surface fluorination
  • Kim, Yongjae;
  • Kang, Hojin;
  • Ha, Heeju;
  • Kim, Changkoo;
  • Cho, Sungmin;
  • Chae, Heeyeop
  • 2023-08-01
  • Applied Surface Science, Vol.627
  • Elsevier B.V.
Quasi atomic layer etching of SiO2 using plasma fluorination for surface cleaning
  • 2018-01-01
  • Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol.36
  • AVS Science and Technology Society
Angular dependence of SiO2 etching in plasmas containing heptafluoropropyl methyl ether
  • 2019-01-01
  • Thin Solid Films, Vol.669, pp.262-268
  • Elsevier B.V.
Fluorine doping for improved thermoelectric properties of spark plasma sintered bismuth telluride
  • 2021-11-10
  • Journal of Materials Science and Technology, Vol.90, pp.225-235
  • Chinese Society of Metals
Effect of Discharge Gas Composition on SiC Etching in an HFE-347mmy/O2/Ar Plasmaoa mark
  • 2024-08-01
  • Materials, Vol.17
  • Multidisciplinary Digital Publishing Institute (MDPI)
Sequential doping strategy in rutile TiO2 nanorod for high performance photoanode
  • Lee, Sang Yeon;
  • Lee, Young Jae;
  • Yoo, Il Han;
  • Kim, Hyeon Woo;
  • Song, Hyejeong;
  • Heo, Soo Won;
  • Kalanur, Shankara S.;
  • Mohapatra, Gourab;
  • Rohma,;
  • Ko, Hyunseok;
  • Seo, Hyungtak
  • 2024-04-15
  • Applied Surface Science, Vol.652
  • Elsevier B.V.
Auto-masked surface texturing of kerf-loss free silicon wafers using hexafluoroisopropanol in a capacitively coupled plasma etching system
  • 2019-01-01
  • ECS Journal of Solid State Science and Technology, Vol.8, pp.Q76-Q79
  • Electrochemical Society Inc.
Si3N4 etch rates at various ion-incidence angles in high-density CF4, CHF3, and C2F6 plasmas
  • 2020-02-01
  • Korean Journal of Chemical Engineering, Vol.37, pp.374-379
  • Springer
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