Ajou University repository

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Vanadium oxide thin film deposited on Si by atomic layer deposition for non-volatile resistive switching memory devices
  • 2023-12-01
  • Applied Surface Science, Vol.639
  • Elsevier B.V.
Ink: In-kernel key-value storage with persistent memoryoa mark
  • 2020-11-01
  • Electronics (Switzerland), Vol.9, pp.1-22
  • MDPI AG
Hybrid Volatile/Nonvolatile Resistive Switching Memory in Ternary Metal Oxide Enabling Hopfield Neural Classification
  • 2023-02-28
  • ACS Applied Electronic Materials, Vol.5, pp.896-904
  • American Chemical Society
영구 메모리를 통해 확장되는 대용량 주소 공간의 효율적인 활용을 위한 운영체제 기술연구
  • 하민종
  • 2022-02
  • The Graduate School, Ajou University
HyFAT: Affordable hybrid fast address translating device driver for multichannel-based flash devices
  • 2019-05-01
  • IEEE Transactions on Consumer Electronics, Vol.65, pp.142-149
  • Institute of Electrical and Electronics Engineers Inc.
Collective Control of Potential-Constrained Oxygen Vacancies in Oxide Heterostructures for Gradual Resistive Switching
  • Jeon, Jaeyoung;
  • Eom, Kitae;
  • Lee, Minkyung;
  • Kim, Sungkyu;
  • Lee, Hyungwoo
  • 2023-09-13
  • Small, Vol.19
  • John Wiley and Sons Inc
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